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BAS70 Fiches technique(PDF) 1 Page - Diotec Semiconductor

No de pièce BAS70
Description  SMD Small Signal Schottky Diodes
Download  2 Pages
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Fabricant  DIOTEC [Diotec Semiconductor]
Site Internet  http://www.diotec.com
Logo DIOTEC - Diotec Semiconductor

BAS70 Fiches technique(HTML) 1 Page - Diotec Semiconductor

  BAS70_17 Datasheet HTML 1Page - Diotec Semiconductor BAS70_17 Datasheet HTML 2Page - Diotec Semiconductor  
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BAS70, BAS70-04, BAS70-05, BAS70-06
BAS70, BAS70-04, BAS70-05, BAS70-06
SMD Small Signal Schottky Diodes
SMD Kleinsignal-Schottkydioden
IFAV = 70 mA
VF1
< 0.41 V
Tjmax = 150°C
VRRM = 70 V
IFSM = 100 mA
trr
< 5 ns
Version 2017-07-07
SOT-23
(TO-236)
Dimensions - Maße [mm]
Typical Applications
Signal processing, High-speed
switching, Polarity protection
Commercial grade 1)
Typische Anwendungen
Signalverarbeitung, Schnelles
Schalten, Verpolschutz
Standardausführung 1)
Features
Very high switching speed
Low junction capacitance
Low leakage current
Compliant to RoHS, REACH,
Conflict Minerals 1)
Besonderheiten
Extrem schnelles Schalten
Niedrige Sperrschicht-Kapazität
Niedriger Sperrstrom
Konform zu RoHS, REACH,
Konfliktmineralien 1)
Mechanical Data 1)
Mechanische Daten 1)
Taped and reeled
3000 / 7“
Gegurtet auf Rolle
Weight approx.
0.01 g
Gewicht ca.
Solder & assembly conditions
260°C/10s
Löt- und Einbaubedingungen
MSL = 1
Single
Diode
BAS70
1 = A 2 = n. c. 3 = C
Type
Code
73
Series
Connection
BAS70-04
1 = A1 2 = C2 3 = C1/A2
Type
Code
74
Common
Cathode
BAS70-05
1 = A1 2 = A2 3 = C1/C2
Type
Code
75
Common
Anode
BAS70-06
1 = C1 2 = C2 3 = A1/A2
Type
Code
76
Maximum ratings 2)
Grenzwerte 2)
Power dissipation − Verlustleistung 3)
Ptot
200 mW 4)
Max. average forward current – Dauergrenzstrom
DC
IFAV
70 mA 4)
Repetitive peak forward current – Periodischer Spitzenstrom
IFRM
70 mA 4)
Non repetitive peak forward surge current – Stoßstrom-Grenzwert
tp ≤ 1 s
IFSM
100 mA
Repetitive peak reverse voltage – Periodische Spitzensperrspannung
VRRM
70 V
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Tj
TS
-55...+150°C
-55…+150°C
1
Please note the detailed information on our website or at the beginning of the data book
Bitte beachten Sie die detaillierten Hinweise auf unserer Internetseite bzw. am Anfang des Datenbuches
2
TA = 25°C and per diode, unless otherwise specified – TA = 25°C und pro Diode, wenn nicht anders angegeben
3
Total power dissipation of both diodes − Summe der Verlustleistungen beider Dioden
4
Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss
© Diotec Semiconductor AG
http://www.diotec.com/
1
Pb
RoHS
1.1
+0.1
0.4+0.1
2.9 ±0.1
1
2
3
Type
Code
1.9
±0.1
-0.05
-0.2
2
1
3
2
3
1
2
1
3
2
1
3


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