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SI3441BDV Fiches technique(PDF) 4 Page - Vishay Siliconix |
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SI3441BDV Fiches technique(HTML) 4 Page - Vishay Siliconix |
4 / 5 page Si3441BDV Vishay Siliconix New Product www.vishay.com 4 Document Number: 72028 S-03669—Rev. B, 07-Apr-03 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0 10 2 Single Pulse Power Time (sec) 4 10-3 10-2 1 10 600 10-1 10-4 100 - 0.6 - 0.4 - 0.2 - 0.0 0.2 0.4 0.6 - 50 - 25 0 25 50 75 100 125 150 ID = 250 mA 2 1 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Threshold Voltage TJ - Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient Square Wave Pulse Duration (sec) 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 120_C/W 3. TJM - TA = PDMZthJA(t) t1 t2 t1 t2 Notes: 4. Surface Mounted PDM 1 100 600 10 10-1 10-2 6 8 Safe Operating Area VDS - Drain-to-Source Voltage (V) 100 1 0.1 1 10 100 0.01 10 TA = 25_C Single Pulse 0.1 IDM Limited rDS(on) Limited BVDSS Limited TA = 25_C 1 ms 10 ms 100 ms dc, 100 s, 10 s 10 ms 100 ms 1 s |
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