NTE2339 datasheet(2/2 Pages) NTE

No de pièce	NTE2339

Description	Silicon NPN Transistor High Voltage, High Speed Switch

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Fabricant	NTE [NTE Electronics]

Site Internet	http://www.nteinc.com

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Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector–Base Breakdown Voltage

V(BR)CBO IC = 1mA, IE = 0

1100

–

V

Collector–Emitter Breakdown Voltage V(BR)CEO IC = 5mA, RBE = ∞

800

–

V

Emitter–Base Breakdown Voltage

V(BR)EBO IE = 1mA, IC = 0

7

–

V

Collector–Emitter Sustaining Voltage VCEX(sus) IC = 1.5A, IB1 = IB2 = 300mA,

L = 2mH, Clamped

800

–

V

Turn–On Time

ton

–

0.5

µs

Storage Time

tstg

VCC = 400V, IB1 = –2.5A,

Ω

–

3.0

µs

Fall Time

tf

IB2 =IC = 2A, RL = 200Ω

–

0.3

µs

.402 (10.2) Max

.224 (5.7) Max

.295

(7.5)

.165

(4.2)

.669

(17.0)

Max

.531

(13.5)

Min

.100 (2.54)

.059 (1.5) Max

.114 (2.9) Max

.173 (4.4) Max

BC

E

.122 (3.1)

Dia

NOTE: Tab is isolated

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