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STB520N Fiches technique(PDF) 3 Page - SamHop Microelectronics Corp. |
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STB520N Fiches technique(HTML) 3 Page - SamHop Microelectronics Corp. |
3 / 8 page www.samhop.com.tw 3 Tj( ° C ) VDS, Drain-to-Source Voltage(V) Figure 1. Output Characteristics VGS, Gate-to-Source Voltage(V) Figure 2. Transfer Characteristics ID, Drain Current(A) Tj, Junction Temperature(° C ) Figure 3. On-Resistance vs. Drain Current Figure 4. On-Resistance Variation with Drain Tj, Junction Temperature(° C ) Figure 5. Gate Threshold Variation Tj, Junction Temperature(° C ) Figure 6. Breakdown Voltage Variation and Gate Voltage Current and Temperature with Temperature with Temperature 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 150 V DS =V GS ID=250uA 0 25 50 75 100 125 150 1.3 1.2 1.1 1.0 0.9 0.8 0.7 100 75 50 25 0125 -50 -25 Jul,07,2016 STB520N Ver 1.0 20 15 10 5 0 5 25 3 2 1 0 4 6 120 100 80 60 40 20 1 14 28 42 56 70 1 2.0 1.8 1.6 1.4 1.2 1.0 0.0 0 25 50 75 150 100 125 ID=250uA 6 VGS =5V 1 03 24 5 VGS =4V 0 20 50 60 70 TJ =125 C -55 C 25 C V GS =10V 40 30 10 VGS =10V 2.2 2.4 V GS =10V ID=11A |
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