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2SK3391JX Fiches technique(PDF) 1 Page - Renesas Technology Corp |
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2SK3391JX Fiches technique(HTML) 1 Page - Renesas Technology Corp |
1 / 5 page Rev.2.00, Apr.14.2004, page 1 of 4 2SK3391 Silicon N-Channel MOS FET UHF Power Amplifier REJ03G0209-0200Z (Previous ADE-208-847 (Z)) Rev.2.00 Apr.14.2004 Features • High power output, High gain, High efficiency PG = 18 dB, Pout = 1.6 W, ηadd = 58% min. (f = 836 MHz) • Compact package capable of surface mounting Outline UPAK D G S 1 2,4 3 3 1. Gate 2. Source 3. Drain 4. Source 2 1 4 Note: Marking is “JX“. This Device is sensitive to Electro Static Discharge. An Adequate handling procedure is requested. Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS 17 V Gate to source voltage VGSS ±10 V Drain current ID 0.3 A Drain peak current ID(pulse) Note1 0.75 A Channel dissipation Pch Note2 5W Channel temperature Tch 150 °C Storage temperature Tstg –45 to +150 °C Notes: 1. PW < 1sec, Tch < 150°C 2. Value at Tc = 25 °C |
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