 |
Moteur de recherche de fiches techniques de composants électroniques |
|
|
Moteur de recherche de fiches techniques de composants électroniques |
|
TK2150 Fiches technique(PDF) 26 Page - Tripath Technology Inc. |
|
||||||||||||||||||||||||||||||
TK2150 Fiches technique(HTML) 26 Page - Tripath Technology Inc. |
|
|
26 / 34 page  Tr i p ath Technol ogy, I n c. - Techni cal In fo rma t io n 26 TK2150 – Rev. 1.0/12.02 The half-bridge power MOSFETs require a deadtime between when one transistor is turned off and the other is turned on (break-before-make) in order to minimize shoot through currents. The TC2001 has BBM0 and BBM1 that are logic inputs (connected to logic high or pulled down to logic low) that control the break-before-make timing of the output transistors according to the following table. BBM1 BBM0 Delay 0 0 120 ns 0 1 80 ns 1 0 40 ns 1 1 0 ns Table 1: BBM Delay The tradeoff involved in making this setting is that as the delay is reduced, distortion levels improve but shoot-through and power dissipation increase. All typical curves and performance information were done with using the 40ns BBM setting. The actual amount of BBM required is dependent upon other component values and circuit board layout, the value selected should be verified in the actual application circuit/board. It should also be verified under maximum temperature and power conditions since shoot-through in the output MOSFETs can increase under these conditions, possibly requiring a higher BBM setting than at room temperature. Recommended MOSFETs The following devices are capable of achieving full performance, both in terms of distortion and efficiency, for the specified load impedance and voltage range. Device Information – Recommended MOSFETs Part Number Manufacturer BVDSS (V) ID (A) Qg (nC) RDS(on) (Ω) PD (W) Package IRF520N International Rectifier 100 9.7 25(max.) 0.20 (max.) 48 TO220 FQP13N10 Fairchild Semiconductor 100 12.8 12 0.142 65 TO220 STP14NF10 ST Microelectronics 100 14 15.5 0.16 60 TO220 IRF530N International Rectifier 100 17 37(max.) 0.09 (max.) 70 TO220 BUK7575-100A Philips Semiconductor 100 23 25 0.064 99 TO220 STP24NF10 ST Microelectronics 100 26 30 0.055 85 TO220 Note: The devices are listed in ascending current capability not in order of recommendation. The following information represents qualitative data from system development using the TK2150 and the associated MOSFETs. Recommendations such as maximum supply voltages and gate resistor values are dependent on the PCB layout and component location. The gate resistor values were chosen to achieve about 18-80mA of idle current from the VPP supply. This value of supply current is a good compromise between low power efficiency and high frequency THD+N performance. As shown in Table 2 below, increasing the gate resistor value will improve high frequency THD+N performance at the expense of idle current draw. The BBM setting was 40nS in all cases. It should be understood that different MOSFETs will have different characteristics and will require some adjustment to the gate resistor to achieve the same idle current. |
Numéro de pièce similaire - TK2150 |
|
Description similaire - TK2150 |
|
|
Lien URL |
| Politique de confidentialité |
| ALLDATASHEET.FR |
| ALLDATASHEET vous a-t-il été utile ? [ DONATE ] |
À propos de Alldatasheet | Publicité | Contactez-nous | Politique de confidentialité | Echange de liens | Fabricants All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
French ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
