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SI4133G-BT Fiches technique(PDF) 4 Page - Silicon Laboratories |
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SI4133G-BT Fiches technique(HTML) 4 Page - Silicon Laboratories |
4 / 32 page Si 41 33 G 4 Rev. 1.1 Electrical Specifications Table 1. Recommended Operating Conditions Parameter Symbol Test Condition Min Typ Max Unit Ambient Temperature TA –20 25 85 °C Supply Voltage V DD 2.7 3.0 3.6 V Supply Voltages Difference V∆ (VDDR – VDDD), (VDDI – VDDD) –0.3 — 0.3 V Note: All minimum and maximum specifications are guaranteed and apply across the recommended operating conditions. Typical values apply at 3.0 V and an operating temperature of 25°C unless otherwise stated. Table 2. Absolute Maximum Ratings1,2 Parameter Symbol Value Unit DC Supply Voltage VDD –0.5 to 4.0 V Input Current3 IIN ±10 mA Input Voltage3 V IN –0.3 to VDD+0.3 V Storage Temperature Range T STG –55 to 150 oC Notes: 1. Permanent device damage may occur if the above Absolute Maximum Ratings are exceeded. Functional operation should be restricted to the conditions as specified in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2. This device is a high performance RF integrated circuit with an ESD rating of < 2 kV. Handling and assembly of this device should only be done at ESD-protected workstations. 3. For signals SCLK, SDATA, SENB, PWDNB and XIN. |
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Description similaire - SI4133G-BT |
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