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IRFAG50 Fiches technique(PDF) 2 Page - International Rectifier

No de pièce IRFAG50
Description  REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE)
Download  7 Pages
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Fabricant  IRF [International Rectifier]
Site Internet  http://www.irf.com
Logo IRF - International Rectifier

IRFAG50 Fiches technique(HTML) 2 Page - International Rectifier

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IRFAG50
2
www.irf.com
Thermal Resistance
Parameter
Min Typ Max
Units
Test Conditions
RthJC
Junction to Case
0.83
RthJA
Junction to Ambient
30
Typical socket mount
°C/W
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ
Max Units
Test Conditions
IS
Continuous Source Current (Body Diode)
5.6
ISM
Pulse Source Current (Body Diode) ➀
——
2 2
VSD
Diode Forward Voltage
1.8
V
Tj = 25°C, IS =5.6A, VGS = 0V ➃
trr
Reverse Recovery Time
1200
nS
Tj = 25°C, IF =5.6A, di/dt ≤ 100A/µs
QRR
Reverse Recovery Charge
8.4
µC
VDD ≤ 50V ➃
t on
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
For footnotes refer to the last page
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min
Typ
Max Units
Test Conditions
BVDSS
Drain-to-Source Breakdown Voltage
1000
V
VGS = 0V, ID = 1.0mA
∆BVDSS/∆TJ Temperature Coefficient of Breakdown
1.4
V/°C
Reference to 25°C, ID = 1.0mA
Voltage
RDS(on)
Static Drain-to-Source On-State
2.0
VGS =10V, ID =3.5A➃
Resistance
2.3
VGS = 10V, ID =5.6A ➃
VGS(th)
Gate Threshold Voltage
2.0
4.0
V
VDS = VGS, ID =250mA
gfs
Forward Transconductance
5.2
S ( )VDS > 15V, IDS =3.5A ➃
IDSS
Zero Gate Voltage Drain Current
2 5
VDS=800V, VGS=0V
250
VDS =800V
VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Leakage Forward
100
VGS = 20V
IGSS
Gate-to-Source Leakage Reverse
-100
VGS = -20V
Qg
Total Gate Charge
8 8
2 0 0
VGS= 10V, ID=5.6A
Qgs
Gate-to-Source Charge
8.8
2 0
nC
VDS =500V
Qgd
Gate-to-Drain (‘Miller’) Charge
4 8
110
td(on)
Turn-On Delay Time
3 0
VDD =400V*, ID =5.6A,
t r
Rise Time
4 4
RG =2.35Ω
td(off)
Turn-Off Delay Time
210
tf
Fall Time
6 0
LS + LD
Total Inductance
6.1
Ciss
Input Capacitance
2400
VGS = 0V, VDS = 25V
Coss
Output Capacitance
240
pF
f = 1.0MHz
Crss
Reverse Transfer Capacitance
8 0
nA
nH
ns
µA
Measured from drain lead (6mm/0.25in. from
package) to source lead (6mm/0.25in. from
package)
*Equipment Limitation


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