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NTE192 Fiches technique(PDF) 1 Page - NTE Electronics

No de pièce NTE192
Description  Silicon Complementary Transistors Audio Power Output
Download  2 Pages
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Fabricant  NTE [NTE Electronics]
Site Internet  http://www.nteinc.com
Logo NTE - NTE Electronics

NTE192 Fiches technique(HTML) 1 Page - NTE Electronics

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NTE192 (NPN) & NTE193 (PNP)
NTE192A (NPN) & NTE193A (PNP)
Silicon Complementary Transistors
Audio Power Output
Description:
NTE192 (NPN)/NTE193 (PNP) and NTE192A (NPN)/NTE193A (PNP) are silicon complementary
transistors in a TO92HS type package designed for use in general purpose industrial circuits. These
devices are especially suited for high level linear amplifiers or medium speed switching circuits in
industrial control applications.
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Emitter Voltage, VCEO
50V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Base Voltage, VCBO
50V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Base Voltage, VEBO
5V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous Collector Current (Note 1), IC
500mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (TC = +25°C, Note 1), PT
900mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
°C
7.2mW/
°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (TA = +25°C), PT
560mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
°C
4.47mW/
°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, TJ
+150
°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, Tstg
–55
° to +150°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (During Soldering, 1/16”
±1/32” from case for 10sec max), TL
+260
°C
. . . . . . . .
Note 1. Determined from power limitations due to saturation voltage at this current.
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
DC Characteristics
Collector Cutoff Current
ICBO
VCB = 50V
–
–
0.1
µA
VCB = 50V, TA = +100°C
–
–
15
µA
Emitter Cutoff Current
IEBO
VEB = 5V
–
–
0.1
µA
Collector Saturation Voltage
VCE(sat) IB = 3mA, IC = 50mA
–
–
0.30
V
Base Saturation Voltage
VBE(sat) IB = 3mA, IC = 50mA
–
–
0.85
V
DC Current Gain
hFE
VCE = 4.5V, IC = 2mA
180
–
540


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