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1N4002GS Fiches technique(PDF) 1 Page - Yangzhou yangjie electronic co., ltd |
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1N4002GS Fiches technique(HTML) 1 Page - Yangzhou yangjie electronic co., ltd |
1 / 4 page 1N4001GS THRU 1N4007GS 1 / 4 Yangzhou Yangjie Electronic Technology Co., Ltd. S-A018 Rev.2.0,28-Apr-14 www.21yangjie.com General Purpose Rectifier Features ● High efficiency ● High current capability ● High reliability ● High surge current capability ● Low power loss ● Glass passivated chip junction ● Solder dip 275 °C max. 7 s, per JESD 22-B106 Mechanical Data ● Package: A-405 Molding compound meets UL 94 V-0 flammability rating, RoHS-compliant ● Terminals: Tin plated leads, solderable per J-STD- 002 and JESD22-B102 ● Polarity:Color band denotes cathode end ■Maximum Ratings (Ta=25℃ Unless otherwise specified) PARAMETER SYMBOL UNIT 1N4001GS 1N4002GS 1N4003GS 1N4004GS 1N4005GS 1N4006GS 1N4007GS Device marking code 1N4001GS 1N4002GS 1N4003GS 1N4004GS 1N4005GS 1N4006GS 1N4007GS Repetitive Peak Reverse Voltage VRRM V 50 100 200 400 600 800 1000 Average Forward Current @60Hz sine wave, Resistance load, Ta =75℃ IF(AV) A 1.0 Surge(Non-repetitive)Forward Current @ 60Hz Half-sine wave,1 cycle, Ta=25℃ IFSM A 30 Storage Temperature Tstg ℃ -55 ~+150 Junction Temperature Tj ℃ -55~+150 ■Electrical Characteristics(Ta=25℃ Unless otherwise specified) PARAMETER SYMBOL UNIT TEST CONDITIONS 1N4001G S 1N4002G S 1N4003G S 1N4004G S 1N4005G S 1N4006G S 1N4007G S Maximum instantaneous forward voltage drop per diode V FM V IFM=1.0A 1.1 Maximum DC reverse current at rated DC blocking voltage per diode I RRM1 μA Ta=25℃ 2.5 I RRM2 Ta=125℃ 50 Typical junction capacitance Cj pF Measured at 1MHZ and Applied Reverse Voltage of 4.0 V.D.C. 12 ■Thermal Characteristics (Ta=25℃ Unless otherwise specified) PARAMETER SYMBOL UNIT 1N4001GS 1N4002GS 1N4003GS 1N4004GS 1N4005GS 1N4006GS 1N4007GS Thermal Resistance(Typical) RθJ-A ℃ /W 65 COMPLIANT RoHS |
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