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TPS25821DSSR Fiches technique(PDF) 4 Page - Texas Instruments

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No de pièce TPS25821DSSR
Description  TPS25821 USB Type-C 1.5-A Source Controller and Power Switch
Download  35 Pages
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Fabricant  TI1 [Texas Instruments]
Site Internet  http://www.ti.com
Logo TI1 - Texas Instruments

TPS25821DSSR Fiches technique(HTML) 4 Page - Texas Instruments

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TPS25820, TPS25821
SLVSE24 – NOVEMBER 2017
www.ti.com
Product Folder Links: TPS25820 TPS25821
Submit Documentation Feedback
Copyright © 2017, Texas Instruments Incorporated
(1)
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range, voltages are respect to GND (unless otherwise noted)
(1)
MIN
MAX
UNIT
Pin voltage, V
IN, EN, CHG, REF, OUT, FAULT, CC1, CC2, SINK, POL
–0.3
6
V
Pin positive source current, ISRC
OUT, REF, CC1, CC2
Internally
limited
A
Pin positive sink current, ISNK
OUT (while applying VBUS)
2.5
A
CC1, CC2 (while TPS25820 applying VCONN)
1
A
FAULT, SINK, POL
Internally
limited
mA
Operating junction temperature, TJ
–40
180
°C
Storage temperature range, Tstg
–65
150
°C
(1)
Electrostatic discharge (ESD) to measure device sensitivity/immunity to damage caused by assembly line electrostatic discharges into
the device.
(2)
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(3)
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
(4)
Surges per IEC61000-4-2, 1999 applied between CC1/CC2 and output ground of the TPS25820EVM-835.
6.2 ESD Ratings
VALUE
UNIT
V(ESD)
(1)
Electrostatic
discharge
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(2)
±2000
V
Charged-device model (CDM), per JEDEC specification JESD22-C101(3)
±500
IEC61000-4-2 contact discharge, CC1 and CC2(4)
±8000
IEC61000-4-2 air-gap discharge, CC1 and CC2(4)
±15000
6.3 Recommended Operating Conditions
Voltages are with respect to GND (unless otherwise noted)
MIN
NOM
MAX
UNIT
VI
Supply voltage
IN
4.5
5.5
V
VI
Input voltage
EN, CHG
0
5.5
V
VIH
High-level input voltage
EN, CHG
2
V
VIL
Low-level voltage
EN, CHG
0.8
V
VPU
Pull-up voltage
Used on FAULT, SINK, POL
0
5.5
V
ISRC
Positive source current
OUT
1.5
A
CC1 or CC2 when supplying VCONN
250
mA
ISNK
Positive sink current (100 ms
moving average)
SINK, POL
5
mA
FAULT
10
ISNK_PULSE Positive repetitive pulse sink current FAULT, SINK, POL
Internally
Limited
mA
TJ
Operating junction temperature
–40
125
°C


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