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TPS25821DSSR Fiches technique(PDF) 4 Page - Texas Instruments |
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TPS25821DSSR Fiches technique(HTML) 4 Page - Texas Instruments |
4 / 35 page 4 TPS25820, TPS25821 SLVSE24 – NOVEMBER 2017 www.ti.com Product Folder Links: TPS25820 TPS25821 Submit Documentation Feedback Copyright © 2017, Texas Instruments Incorporated (1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. 6 Specifications 6.1 Absolute Maximum Ratings over operating free-air temperature range, voltages are respect to GND (unless otherwise noted) (1) MIN MAX UNIT Pin voltage, V IN, EN, CHG, REF, OUT, FAULT, CC1, CC2, SINK, POL –0.3 6 V Pin positive source current, ISRC OUT, REF, CC1, CC2 Internally limited A Pin positive sink current, ISNK OUT (while applying VBUS) 2.5 A CC1, CC2 (while TPS25820 applying VCONN) 1 A FAULT, SINK, POL Internally limited mA Operating junction temperature, TJ –40 180 °C Storage temperature range, Tstg –65 150 °C (1) Electrostatic discharge (ESD) to measure device sensitivity/immunity to damage caused by assembly line electrostatic discharges into the device. (2) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. (3) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. (4) Surges per IEC61000-4-2, 1999 applied between CC1/CC2 and output ground of the TPS25820EVM-835. 6.2 ESD Ratings VALUE UNIT V(ESD) (1) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(2) ±2000 V Charged-device model (CDM), per JEDEC specification JESD22-C101(3) ±500 IEC61000-4-2 contact discharge, CC1 and CC2(4) ±8000 IEC61000-4-2 air-gap discharge, CC1 and CC2(4) ±15000 6.3 Recommended Operating Conditions Voltages are with respect to GND (unless otherwise noted) MIN NOM MAX UNIT VI Supply voltage IN 4.5 5.5 V VI Input voltage EN, CHG 0 5.5 V VIH High-level input voltage EN, CHG 2 V VIL Low-level voltage EN, CHG 0.8 V VPU Pull-up voltage Used on FAULT, SINK, POL 0 5.5 V ISRC Positive source current OUT 1.5 A CC1 or CC2 when supplying VCONN 250 mA ISNK Positive sink current (100 ms moving average) SINK, POL 5 mA FAULT 10 ISNK_PULSE Positive repetitive pulse sink current FAULT, SINK, POL Internally Limited mA TJ Operating junction temperature –40 125 °C |
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