IRFB4610 datasheet(4/11 Pages) IRF

No de pièce	IRFB4610

Description	IRFB4610 IRFS4610 IRFSL4610

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Fabricant	IRF [International Rectifier]

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IRF/B/S/SL4610

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Fig 8. Maximum Safe Operating Area

Fig 10. Drain-to-Source Breakdown Voltage

Fig 7. Typical Source-Drain Diode

Forward Voltage

Fig 11. Typical COSS Stored Energy

Fig 9. Maximum Drain Current vs.

Case Temperature

Fig 12. Maximum Avalanche Energy Vs. DrainCurrent

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

VSD, Source-to-Drain Voltage (V)

0.1

1.0

10.0

100.0

1000.0

TJ = 25°C

TJ = 175°C

VGS = 0V

25

50

75

100

125

150

175

TJ , Junction Temperature (°C)

0

20

40

60

80

-60 -40 -20 0

20 40 60 80 100 120 140 160 180

TJ , Junction Temperature (°C)

100

105

110

115

120

125

0

20

40

60

80

100

VDS, Drain-to-Source Voltage (V)

0.0

0.5

1.0

1.5

2.0

25

50

75

100

125

150

175

Starting TJ, Junction Temperature (°C)

0

400

800

1200

1600

I D

TOP

4.6A

6.3A

BOTTOM

44A

1

10

100

1000

VDS , Drain-toSource Voltage (V)

0.1

1

10

100

1000

Tc = 25°C

Tj = 175°C

Single Pulse

1msec

10msec

OPERATION IN THIS AREA

LIMITED BY RDS(on)

100µsec

DC

Numéro de pièce similaire - IRFB4610

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International Rectifier	IRFB4610	455Kb / 11P	High Efficiency Synchronous Rectification in SMPS
Inchange Semiconductor ...	IRFB4610	338Kb / 2P	N-Channel MOSFET Transistor
International Rectifier	IRFB4610PBF	416Kb / 11P	HEXFET Power MOSFET

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