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EC733611E Fiches technique(PDF) 1 Page - E-CMOS Corporation |
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EC733611E Fiches technique(HTML) 1 Page - E-CMOS Corporation |
1 / 5 page EC733611E -30V、 、 、 、-12A P-Channel MOSFET E-CMOS Corp. (www.ecmos.com.tw) Page 1 of 5 4L25N-Rev.F002 Description It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications Features ◆ Advanced MOSFET process technology ◆ Special designed for PWM, load switching and general purpose applications ◆ Ultra low on-resistance with low gate charge ◆ Fast switching and reverse body recovery ◆ 150℃ operating temperature Main Product Characteristics Absolute Maximum Ratings Symbol Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V ① -12 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V ① -7.4 IDM Pulsed Drain Current ② -48 A PD @TC = 25°C Power Dissipation ③ 2 W VDS Drain-Source Voltage -30 V VGS Gate-to-Source Voltage ± 20 V TJ TSTG Operating Junction and Storage Temperature Range -55 to +150 ℃ Thermal Resistance Symbol Characterizes Typ. Max. Units RθJA Junction-to-ambient (t ≤ 10s) ④ — 62.5 /W VDSS -30V RDS(on) 10.6m (typ.) ID -12A |
Numéro de pièce similaire - EC733611E |
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Description similaire - EC733611E |
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