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DE275-501N16 Fiches technique(PDF) 3 Page - IXYS Corporation

No de pièce DE275-501N16
Description  RF Power MOSFET
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Fabricant  IXYS [IXYS Corporation]
Site Internet  http://www.ixys.com
Logo IXYS - IXYS Corporation

DE275-501N16 Fiches technique(HTML) 3 Page - IXYS Corporation

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DE275-501N16A
RF Power MOSFET
Directed Energy, Inc.
An
IXYS Company
501N16A DE-SERIES SPICE Model
The DE-SERIES SPICE Model is illustrated in Figure 1. The model is an expansion of the SPICE
level 3 MOSFET model. It includes the stray inductive terms LG, LS and LD. Rd is the RDS(ON) of
the device, Rds is the resistive leakage term. The output capacitance, COSS, and reverse transfer
capacitance, CRSS are modeled with reversed biased diodes. This provides a varactor type re-
sponse necessary for a high power device model. The turn on delay and the turn off delay are ad-
justed via Ron and Roff.
Figure 1 DE-SERIES SPICE Model
This SPICE model may be downloaded as a text file from the DEI web site at
www.directedenergy.com/spice.htm
Net List:
SYM=POWMOSN
.SUBCKT 501N16A 10 20 30
* TERMINALS: D G S
* 500 Volt 16 Amp .5 ohm N-Channel Power MOSFET
* REVA 6-15-00
M1 1 2 3 3 DMOS L=1U W=1U
RON 5 6 .2
DON 6 2 D1
ROF 5 7 .2
DOF 2 7 D1
D1CRS 2 8 D2
D2CRS 1 8 D2
CGS 2 3 2.0N
RD 4 1 .5
DCOS 3 1 D3
RDS 1 3 5.0MEG
LS 3 30 .5N
LD 10 4 1N
LG 20 5 1N
.MODEL DMOS NMOS (LEVEL=3 VTO=3.0 KP=5.8)
.MODEL D1 D (IS=.5F CJO=10P BV=100 M=.5 VJ=.7 TT=1N RS=10M)
.MODEL D2 D (IS=.5F CJO=450P BV=500 M=.4 VJ=.6 TT=10N RS=10M)
.MODEL D3 D (IS=.5F CJO=900P BV=500 M=.3 VJ=.3 TT=400N RS=10M)
.ENDS
56
7
8
4
10 DRAIN
30 SOURCE
20 GATE
Don
Dcos
D2crs
D1crs
Rds
Ron
Doff
Roff
Rd
Lg
Ld
Ls
M3
2
Directed Energy, Inc.
An
IXYS Company
2401 Research Blvd., Suite 108
Fort Collins, CO USA 80526
970-493-1901 Fax: 970-493-1903
Email: deiinfo@directedenergy.com
Web: http://www.directedenergy.com
Doc #9200-0222 Rev 1
© 2001 Directed Energy, Inc.


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