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DE275-501N16 Fiches technique(PDF) 2 Page - IXYS Corporation

No de pièce DE275-501N16
Description  RF Power MOSFET
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Fabricant  IXYS [IXYS Corporation]
Site Internet  http://www.ixys.com
Logo IXYS - IXYS Corporation

DE275-501N16 Fiches technique(HTML) 2 Page - IXYS Corporation

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DE275-501N16A
RF Power MOSFET
Directed Energy, Inc.
An
IXYS Company
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C unless otherwise specified)
min.
typ.
max.
RG
0.3
Ciss
1800
pF
Coss
VGS = 0 V, VDS = 0.8 VDSS(max),
f = 1 MHz
150
pF
Crss
45
pF
Td(on)
3
ns
Ton
VGS = 15 V, VDS = 0.8 VDSS
ID = 0.5 IDM
RG = 0.2
Ω (External)
2
ns
Td(off)
4
ns
Toff
5
ns
Qg(on)
50
nC
Qgs
VGS = 10 V, VDS = 0.5 VDSS
ID = 0.5 ID25
20
nC
Qgd
30
nC
Source-Drain Diode
Characteristic Values
(TJ = 25°C unless otherwise specified)
Symbol
Test Conditions
min.
typ.
max.
IS
VGS = 0 V
6
A
ISM
Repetitive; pulse width limited by TJM
48
A
VSD
1.5
V
Trr
200
ns
IF = IS, VGS = 0 V,
Pulse test, t
≤ 300 µs, duty cycle ≤ 2%
QRM
IF = IS, -di/dt = 100A/
µs,
VR = 100V
0.6
µC
IRM
4
A
Directed Energy, Inc. reserves the right to change limits, test conditions and dimensions.
DEI MOSFETS are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,891,686
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
5,640,045


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