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AD5161BRM10-RL7 Fiches technique(PDF) 4 Page - Analog Devices |
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AD5161BRM10-RL7 Fiches technique(HTML) 4 Page - Analog Devices |
4 / 20 page AD5161 ELECTRICAL CHARACTERISTICS—10 kΩ, 50 kΩ, 100 kΩ VERSIONS (VDD = 5 V ± 10%, or 3 V ± 10%; VA = VDD; VB = 0 V; –40°C < TA < +125°C; unless otherwise noted.) Table 2. Parameter Symbol Conditions Min Typ1 Max Unit DC CHARACTERISTICS—RHEOSTAT MODE Resistor Differential Nonlinearity2 R-DNL RWB, VA = no connect –1 ±0.1 +1 LSB Resistor Integral Nonlinearity2 R-INL RWB, VA = no connect –2 ±0.25 +2 LSB Nominal Resistor Tolerance3 ∆RAB TA = 25°C –30 +30 % Resistance Temperature Coefficient ∆RAB/∆T VAB = VDD, Wiper = no connect 45 ppm/°C Wiper Resistance RW VDD = 5 V 50 120 Ω DC CHARACTERISTICS—POTENTIOMETER DIVIDER MODE (Specifications apply to all VRs) Resolution N 8 Bits Differential Nonlinearity4 DNL –1 ±0.1 +1 LSB Integral Nonlinearity4 INL –1 ±0.3 +1 LSB Voltage Divider Temperature Coefficient ∆VW/∆T Code = 0x80 15 ppm/°C Full-Scale Error VWFSE Code = 0xFF –3 –1 0 LSB Zero-Scale Error VWZSE Code = 0x00 0 1 3 LSB RESISTOR TERMINALS Voltage Range5 VA,B,W GND VDD V Capacitance6 A, B CA,B f = 1 MHz, measured to GND, Code = 0x80 45 pF Capacitance6 W CW f = 1 MHz, measured to GND, Code = 0x80 60 pF Shutdown Supply Current7 IDD_SD VDD = 5.5 V 0.01 1 µA Common-Mode Leakage ICM VA = VB = VDD/2 1 nA DIGITAL INPUTS AND OUTPUTS Input Logic High VIH 2.4 V Input Logic Low VIL 0.8 V Input Logic High VIH VDD = 3 V 2.1 V Input Logic Low VIL VDD = 3 V 0.6 V Input Current IIL VIN = 0 V or 5 V ±1 µA Input Capacitance6 CIL 5 pF POWER SUPPLIES Power Supply Range VDD RANGE 2.7 5.5 V Supply Current IDD VIH = 5 V or VIL = 0 V 3 8 µA Power Dissipation8 PDISS VIH = 5 V or VIL = 0 V, VDD = 5 V 0.2 mW Power Supply Sensitivity PSS ∆VDD = +5 V ± 10%, Code = Midscale ±0.02 ±0.05 %/% DYNAMIC CHARACTERISTICS6, 9 Bandwidth –3dB BW RAB = 10 kΩ/50 kΩ/100 kΩ, Code = 0x80 600/100/40 kHz Total Harmonic Distortion THDW VA =1 V rms, VB = 0 V, f = 1 kHz, RAB = 10 kΩ 0.05 % VW Settling Time (10 kΩ/50 kΩ/100 kΩ) tS VA = 5 V, VB = 0 V, ±1 LSB error band 2 µs Resistor Noise Voltage Density eN_WB RWB = 5 kΩ, RS = 0 9 nV/√Hz Rev. 0 | Page 4 of 20 |
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