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CSF30L200CT-A Fiches technique(PDF) 2 Page - Chip Integration Technology Corporation |
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CSF30L200CT-A Fiches technique(HTML) 2 Page - Chip Integration Technology Corporation |
2 / 3 page 2 ■ Rating and characteristic curves Fig.5 - Forward Current Derating Curve (per diode) 0 25 50 75 100 125 150 175 O Case Temperature,T ( C) C 15 12 6 9 3 18 CSF30L200CT-A Chip Integration Technology Corporation Super Low Barrier High Voltage Power Rectifier Document ID : DS-11KIG Revised Date : 2015/12/02 Revision : C 0.01 0.1 1 10 100 0 200 400 600 800 1000 Fig. 1 - Instantaneous Forward Characteristics (per diode) Instantaneous Forward Voltage,V (Volts) F T =25°C J T =50°C J T =125°C J T =150°C J T =75°C J T =100°C J 0 2 4 6 8 10 12 14 16 0 5 10 15 20 25 100 1000 1 10 100 Fig. 3 - Forward Power Dissipation Average Forward Current,I (A) F ( AV ) Fig. 4 - Total Capacitance VS. reverse voltage Reverse Voltage,V (V) R 0.0001 0.001 0.01 0.1 1 10 0 50 100 150 200 Reverse Voltage,V (V) R Fig. 2 - Reverse Characteristics (per diode) O T =50 C J O T =150 C J O T =125 C J O T =100 C J O T =75 C J O T =25 C J |
Numéro de pièce similaire - CSF30L200CT-A |
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Description similaire - CSF30L200CT-A |
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