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TSHF6410 Fiches technique(PDF) 1 Page - Vishay Siliconix |
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TSHF6410 Fiches technique(HTML) 1 Page - Vishay Siliconix |
1 / 5 page TSHF6410 www.vishay.com Vishay Semiconductors Rev. 1.3, 23-Aug-11 1 Document Number: 81832 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero DESCRIPTION TSHF6410 is an infrared, 890 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package. FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions (in mm): 5 • Peak wavelength: p = 890 nm • High reliability • High radiant power • High radiant intensity • Angle of half intensity: = ± 22° • Low forward voltage • Suitable for high pulse current operation • High modulation bandwidth: fc = 12 MHz • Good spectral matching with Si photodetectors • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC Note ** Please see document “Vishay Material Category Policy”: www.vishay.com/doc?99902 APPLICATIONS • Infrared high speed remote control and free air data transmission systems with high modulation frequencies or high data transmission rate requirements • Transmission systems according to IrDA requirements and for carrier frequency based systems (e.g. ASK/FSK - coded, 450 kHz or 1.3 MHz) Note • Test conditions see table “Basic Characteristics” Note • MOQ: minimum order quantity 94 8389 PRODUCT SUMMARY COMPONENT Ie (mW/sr) (deg) P (nm) tr (ns) TSHF6410 70 ± 22 890 30 ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM TSHF6410 Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1¾ ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage VR 5V Forward current IF 100 mA Peak forward current tp/T = 0.5, tp = 100 μs IFM 200 mA Surge forward current tp = 100 μs IFSM 1.5 A Power dissipation PV 160 mW Junction temperature Tj 100 °C Operating temperature range Tamb - 40 to + 85 °C Storage temperature range Tstg - 40 to + 100 °C Soldering temperature t 5 s, 2 mm from case Tsd 260 °C Thermal resistance junction/ambient J-STD-051, leads 7 mm soldered on PCB RthJA 230 K/W |
Numéro de pièce similaire - TSHF6410_11 |
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Description similaire - TSHF6410_11 |
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