Moteur de recherche de fiches techniques de composants électroniques
  French  ▼
ALLDATASHEET.FR

X  

TSHA5201 Fiches technique(PDF) 2 Page - Vishay Siliconix

No de pièce TSHA5201
Description  Infrared Emitting Diode, 875 nm, GaAlAs
Download  5 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Fabricant  VISHAY [Vishay Siliconix]
Site Internet  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

TSHA5201 Fiches technique(HTML) 2 Page - Vishay Siliconix

  TSHA5201 Datasheet HTML 1Page - Vishay Siliconix TSHA5201 Datasheet HTML 2Page - Vishay Siliconix TSHA5201 Datasheet HTML 3Page - Vishay Siliconix TSHA5201 Datasheet HTML 4Page - Vishay Siliconix TSHA5201 Datasheet HTML 5Page - Vishay Siliconix  
Zoom Inzoom in Zoom Outzoom out
 2 / 5 page
background image
TSHA5200, TSHA5201, TSHA5202, TSHA5203
www.vishay.com
Vishay Semiconductors
Rev. 2.0, 24-Aug-11
2
Document Number: 81019
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
Fig. 2 - Forward Current Limit vs. Ambient Temperature
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
Reverse voltage
VR
5V
Forward current
IF
100
mA
Peak forward current
tp/T = 0.5, tp = 100 μs
IFM
200
mA
Surge forward current
tp = 100 μs
IFSM
2.5
A
Power dissipation
PV
180
mW
Junction temperature
Tj
100
°C
Operating temperature range
Tamb
- 40 to + 85
°C
Storage temperature range
Tstg
- 40 to + 100
°C
Soldering temperature
t
≤ 5 s, 2 mm from case
Tsd
260
°C
Thermal resistance junction/ambient
J-STD-051, leads 7 mm, soldered on PCB
RthJA
230
K/W
0
20
40
60
80
100
120
140
160
180
200
0
1020
3040506070
8090 100
21142
T
amb - Ambient Temperature (°C)
R
thJA = 230 K/W
0
20
40
60
80
100
120
0
10
203040
50607080
90 100
T
amb - Ambient Temperature (°C)
21143
R
thJA = 230 K/W
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
Forward voltage
IF = 100 mA, tp = 20 ms
VF
1.5
1.8
V
Temperature coefficient of VF
IF = 100 mA
TKVF
- 1.6
mV/K
Reverse current
VR = 5 V
IR
100
μA
Junction capacitance
VR = 0 V, f = 1 MHz, E = 0
Cj
20
pF
Temperature coefficient of
φe
IF = 20 mA
TK
φe
- 0.7
%/K
Angle of half intensity
ϕ
± 12
deg
Peak wavelength
IF = 100 mA
λp
875
nm
Spectral bandwidth
IF = 100 mA
Δλ
80
nm
Temperature coefficient of
λp
IF = 100 mA
TK
λp
0.2
nm/K
Rise time
IF = 100 mA
tr
600
ns
IF = 1 A
tr
300
ns
Fall time
IF = 100 mA
tf
600
ns
IF = 1 A
tf
300
ns
Virtual source diameter
d
3.7
mm


Numéro de pièce similaire - TSHA5201

FabricantNo de pièceFiches techniqueDescription
logo
Vishay Siliconix
TSHA5201 VISHAY-TSHA5201 Datasheet
89Kb / 6P
   GaAlAs Infrared Emitting Diodes in ø 5 mm (T–13/4) Package
Rev. 2, 20-May-99
TSHA5201 VISHAY-TSHA5201 Datasheet
122Kb / 6P
   Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs
Rev. 1.7, 05-Sep-08
TSHA5201 VISHAY-TSHA5201 Datasheet
114Kb / 5P
   Infrared Emitting Diode, 875 nm, GaAlAs
Rev. 1.9, 29-Jun-09
TSHA5201 VISHAY-TSHA5201 Datasheet
105Kb / 5P
   Infrared Emitting Diode, 875 nm, GaAlAs
01-Jan-2022
TSHA5201 VISHAY-TSHA5201 Datasheet
105Kb / 5P
   Infrared Emitting Diode, 875 nm, GaAlAs
01-Jan-2023
More results

Description similaire - TSHA5201

FabricantNo de pièceFiches techniqueDescription
logo
Vishay Siliconix
TSHA4401 VISHAY-TSHA4401_V02 Datasheet
117Kb / 5P
   Infrared Emitting Diode, 875 nm, GaAlAs
01-Jan-2023
TSHA6500 VISHAY-TSHA6500_09 Datasheet
101Kb / 5P
   Infrared Emitting Diode, 875 nm, GaAlAs
Rev. 2.0, 06-Oct-09
TSHA6200 VISHAY-TSHA6200 Datasheet
109Kb / 6P
   Infrared Emitting Diode, 875 nm, GaAlAs
Rev. 1.9, 24-Aug-11
TSHA6203 VISHAY-TSHA6203_V01 Datasheet
108Kb / 6P
   Infrared Emitting Diode, 875 nm, GaAlAs
01-Jan-2022
TSHA4401 VISHAY-TSHA4401_V01 Datasheet
117Kb / 5P
   Infrared Emitting Diode, 875 nm, GaAlAs
01-Jan-2022
TSHA5500 VISHAY-TSHA5500_V01 Datasheet
104Kb / 5P
   Infrared Emitting Diode, 875 nm, GaAlAs
01-Jan-2022
TSHA6500 VISHAY-TSHA6500_V01 Datasheet
113Kb / 5P
   Infrared Emitting Diode, 875 nm, GaAlAs
01-Jan-2022
TSHA5500 VISHAY-TSHA5500 Datasheet
105Kb / 5P
   Infrared Emitting Diode, 875 nm, GaAlAs
Rev. 1.9, 24-Aug-11
TSHA6200 VISHAY-TSHA6200_09 Datasheet
115Kb / 6P
   Infrared Emitting Diode, 875 nm, GaAlAs
Rev. 1.8, 25-Jun-09
TSHA4400 VISHAY-TSHA4400 Datasheet
119Kb / 5P
   Infrared Emitting Diode, 875 nm, GaAlAs
Rev. 1.8, 15-Sep-14
More results


Html Pages

1 2 3 4 5


Fiches technique Télécharger

Go To PDF Page


Lien URL




Politique de confidentialité
ALLDATASHEET.FR
ALLDATASHEET vous a-t-il été utile ?  [ DONATE ] 

À propos de Alldatasheet   |   Publicité   |   Contactez-nous   |   Politique de confidentialité   |   Echange de liens   |   Fabricants
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com