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PZT4401 Fiches technique(PDF) 1 Page - Jiangsu Changjiang Electronics Technology Co., Ltd |
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PZT4401 Fiches technique(HTML) 1 Page - Jiangsu Changjiang Electronics Technology Co., Ltd |
1 / 4 page JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-223 Plastic-Encapsulate Transistors PZT4401 TRANSISTOR (NPN) FEATURES Low Voltage and High Current Complementary to PZT4403 Linear Amplifier and Switch Applications MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=0.1mA,IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 40 V Emitter-base breakdown voltage V(BR)EBO IE=0.1mA,IC=0 6 V Collector cut-off current ICBO VCB=60V,IE=0 50 nA Emitter cut-off current IEBO VEB=6V, IC=0 50 nA hFE(1) VCE=1V, IC=0.1mA 20 hFE(2) VCE=1V, IC=1mA 40 hFE(3) VCE=1V, IC=10mA 80 DC current gain hFE(4) VCE=1V, IC=150mA 100 300 IC=150mA,IB=15mA 0.4 V Collector-emitter saturation voltage VCE(sat) IC=500mA,IB=50mA 0.75 V IC=150mA,IB=15mA 0.95 V Base-emitter saturation voltage VBE(sat) IC=500mA,IB=50mA 1.2 V Transition frequency fT VCE=10V,IC=20mA, f=100MHz 250 MHz Collector output capacitance Cob VCB=5V, IE=0, f=1MHz 8 pF Emitter input capacitance Cib VEB=0.5V, IC=0, f=1MHz 30 pF Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current 600 mA PC Collector Power Dissipation 1 W RθJA Thermal Resistance From Junction To Ambient 125 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ SOT-223 1. BASE 2. COLLECTOR 3. EMITTER MARKING: Solid dot = Green molding compound device, if none,the normal device. www.cj-elec.com 1 |
Numéro de pièce similaire - PZT4401 |
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Description similaire - PZT4401 |
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