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IRFD120 Fiches technique(PDF) 2 Page - Fairchild Semiconductor

No de pièce IRFD120
Description  1.3A, 100V, 0.300 Ohm, N-Channel Power MOSFET
Download  7 Pages
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Fabricant  FAIRCHILD [Fairchild Semiconductor]
Site Internet  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

IRFD120 Fiches technique(HTML) 2 Page - Fairchild Semiconductor

  IRFD120 Datasheet HTML 1Page - Fairchild Semiconductor IRFD120 Datasheet HTML 2Page - Fairchild Semiconductor IRFD120 Datasheet HTML 3Page - Fairchild Semiconductor IRFD120 Datasheet HTML 4Page - Fairchild Semiconductor IRFD120 Datasheet HTML 5Page - Fairchild Semiconductor IRFD120 Datasheet HTML 6Page - Fairchild Semiconductor IRFD120 Datasheet HTML 7Page - Fairchild Semiconductor  
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©2002 Fairchild Semiconductor Corporation
IRFD120 Rev. B
Absolute Maximum Ratings
TC = 25
oC, Unless Otherwise Specified
IRFD120
UNITS
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS
100
V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
100
V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
1.3
A
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
5.2
A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
±20
V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
1.0
W
Linear Derating Factor (See Figure 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.008
W/oC
Single Pulse Avalanche Energy Rating (Note 3). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS
36
mJ
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
-55 to 150
oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
300
260
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25
oC to 125oC.
Electrical Specifications
TC = 25
oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BVDSS
ID = 250µA, VGS = 0V (Figure 9)
100
-
-
V
Gate Threshold Voltage
VGS(TH)
VGS = VDS, ID = 250µA
2.0
-
4.0
V
Zero Gate Voltage Drain Current
IDSS
VDS = Rated BVDSS, VGS = 0V
-
-
25
µA
VDS = 0.8 x Rated BVDSS, VGS = 0V, TJ = 125
oC
-
-
250
µA
On-State Drain Current (Note 2)
ID(ON)
VDS > ID(ON) x rDS(ON) Max, VGS = 10V
1.3
-
-
A
Gate Source Leakage
IGSS
VGS = ±20V
-
-
±500
nA
Drain Source On Resistance (Note 2)
rDS(ON)
ID = 0.6A, VGS = 10V (Figures 7, 8)
-
0.25
0.30
Forward Transconductance (Note 2)
gfs
VDS > ID(ON) x rDS(ON)MAX, ID = 0.6A (Figure 11)
0.9
1.0
-
S
Turn-On Delay Time
td(ON)
VDD = 0.5 x Rated BVDSS, ID ≈ 1.3A,
VGS = 10V, RG = 9.1Ω
RL = 38.5Ω for VDD = 50V
MOSFET Switching Times are Essentially
Independent of Operating Temperature
-20
40
ns
Rise Time
tr
-35
70
ns
Turn-Off Delay Time
td(OFF)
-
50
100
ns
Fall Time
tf
-35
70
ns
Total Gate Charge
(Gate to Source + Gate to Drain)
Qg(TOT)
VGS = 10V, ID = 1.3A, VDS = 0.8 x Rated BVDSS,
Ig(REF) = 1.5mA (Figure 13)
Gate Charge is Essentially Independent of Operating
Temperature
-11
15
nC
Gate to Source Charge
Qgs
-
6.0
-
nC
Gate to Drain “Miller” Charge
Qgd
-
5.0
-
nC
Input Capacitance
CISS
VGS = 0V, VDS = 25V, f = 1MHz (Figure 10)
-
450
-
pF
Output Capacitance
COSS
-
200
-
pF
Reverse Transfer Capacitance
CRSS
-50
-
pF
Internal Drain Inductance
LD
Measured From the Drain
Lead, 2mm (0.08in) from
Package to Center of Die
Modified MOSFET
Symbol Showing the
Internal Device’s
Inductances
-
4.0
-
nH
Internal Source Inductance
LS
Measured From the Source
Lead, 2mm (0.08in) from
Header to Source Bonding
Pad
-
6.0
-
nH
Thermal Resistance Junction to Ambient
RθJA
Free Air Operation
-
-
120
oC/W
LS
LD
G
D
S
IRFD120


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