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IRFD120 Fiches technique(PDF) 1 Page - Fairchild Semiconductor

No de pièce IRFD120
Description  1.3A, 100V, 0.300 Ohm, N-Channel Power MOSFET
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Fabricant  FAIRCHILD [Fairchild Semiconductor]
Site Internet  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

IRFD120 Fiches technique(HTML) 1 Page - Fairchild Semiconductor

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©2002 Fairchild Semiconductor Corporation
IRFD120 Rev. B
IRFD120
1.3A, 100V, 0.300 Ohm, N-Channel
Power MOSFET
This advanced power MOSFET is designed, tested, and
guaranteed to withstand a specified level of energy in the
breakdown avalanche mode of operation. These are
N-Channel enhancement mode silicon gate power field
effect transistors designed for applications such as switching
regulators, switching convertors, motor drivers, relay drivers,
and drivers for high power bipolar switching transistors
requiring high speed and low gate drive power. They can be
operated directly from integrated circuits.
Formerly developmental type TA17401.
Features
• 1.3A, 100V
•rDS(ON) = 0.300Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
HEXDIP
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRFD120
HEXDIP
IRFD120
NOTE: When ordering, use the entire part number.
G
D
S
SOURCE
GATE
DRAIN
Data Sheet
January 2002


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