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IRFD120 Fiches technique(PDF) 3 Page - Fairchild Semiconductor

No de pièce IRFD120
Description  1.3A, 100V, 0.300 Ohm, N-Channel Power MOSFET
Download  7 Pages
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Fabricant  FAIRCHILD [Fairchild Semiconductor]
Site Internet  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

IRFD120 Fiches technique(HTML) 3 Page - Fairchild Semiconductor

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©2002 Fairchild Semiconductor Corporation
IRFD120 Rev. B
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Continuous Source to Drain Current
ISD
Modified MOSFET Symbol
Showing the Integral
Reverse P-N Junction
Diode
-
-
1.3
A
Pulse Source to Drain Current
ISDM
-
-
5.2
A
Source to Drain Diode Voltage (Note 2)
VSD
TJ = 25
oC, I
SD = 1.3A, VGS = 0V (Figure 12)
-
-
2.5
V
Reverse Recovery Time
trr
TJ = 150
oC, I
SD = 1.3A, dISD/dt = 100A/µs
-
280
-
ns
Reverse Recovery Charge
QRR
TJ = 150
oC, I
SD = 1.3A, dISD/dt = 100A/µs
-
1.6
-
µC
NOTES:
2. Pulse test: pulse width
≤ 300µs, duty cycle ≤ 2%.
3. VDD = 25V, starting TJ = 25
oC, L = 32mH, R
G = 25Ω, peak IAS = 1.3A.
Typical Performance Curves Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs AMBIENT
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
AMBIENT TEMPERATURE
FIGURE 3. FORWARD BIAS SAFE OPERATING AREA
FIGURE 4. OUTPUT CHARACTERISTICS
G
D
S
TA, AMBIENT TEMPERATURE (
oC)
0
0
25
50
75
100
150
0.2
0.4
0.6
0.8
1.0
1.2
125
TA, AMBIENT TEMPERATURE (
oC)
50
75
100
25
150
1.5
1.2
0.9
0
0.6
0.3
125
VDS, DRAIN TO SOURCE VOLTAGE (V)
1
100
0.1
10
0.1
0.01
10
LIMITED BY rDS(ON)
AREA MAY BE
OPERATION IN THIS
TJ = MAX RATED
1ms
10ms
100ms
100
µs
DC
1
0
10203040
4
8
12
16
20
50
VDS, DRAIN TO SOURCE VOLTAGE (V)
0
VGS = 4V
VGS = 5V
VGS = 7V
PULSE DURATION = 80
µs
VGS = 10V
VGS = 8V
VGS = 6V
VGS = 9V
DUTY CYCLE = 0.5% MAX
IRFD120


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