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KTB1366 Datasheet(Fiches technique) 1 Page - Jiangsu Changjiang Electronics Technology Co., Ltd

Numéro de pièce KTB1366
Description  TO-220-3L Plastic-Encapsulate Transistors
Télécharger  2 Pages
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Fabricant  JIANGSU [Jiangsu Changjiang Electronics Technology Co., Ltd]
Site Internet  http://www.cj-elec.com/en/
Logo JIANGSU - Jiangsu Changjiang Electronics Technology Co., Ltd

KTB1366 Datasheet(HTML) 1 Page - Jiangsu Changjiang Electronics Technology Co., Ltd

  KTB1366 Datasheet HTML 1Page - Jiangsu Changjiang Electronics Technology Co., Ltd KTB1366 Datenblatt HTML 2Page - Jiangsu Changjiang Electronics Technology Co., Ltd  
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TO-220-3L
1. BASE
2. COLLECTOR
3. EMITTER
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220-3L Plastic-Encapsulate Transistors
KTB1366
TRANSISTOR (PNP)
FEATURES
Low Collector Saturation Voltage
Complementary to KTD2058
MAXIMUM RATINGS (Ta=25
℃ unless otherwise noted)
ELECTRICAL CHARACTERISTICS (Ta=25
℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC=-1mA,IE=0
-60
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=-50mA,IB=0
-60
V
Emitter-base breakdown voltage
V(BR)EBO
IE=-1mA,IC=0
-7
V
Collector cut-off current
ICBO
VCB=-60V,IE=0
-100
μA
Emitter cut-off current
IEBO
VEB=-7V,IC=0
-100
μA
hFE(1)
VCE=-5V, IC=-0.5A
60
200
DC current gain
hFE(2)
VCE=-5V, IC=-3A
20
Collector-emitter saturation voltage
VCE(sat)
IC=-2A,IB=-0.2A
-1
V
Base-emitter voltage
VBE
VCE=-5V, IC=-0.5A
-1
V
Collector output capacitance
Cob
VCB=-10V,IE=0, f=1MHz
150
pF
Transition frequency
fT
VCE=-5V,IC=-0.5A
9
MHz
CLASSIFICATION OF hFE (1)
RANK
O
Y
RANGE
60-120
100-200
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
-60
V
VCEO
Collector-Emitter Voltage
-60
V
VEBO
Emitter-Base Voltage
-7
V
IC
Collector Current
-3
A
PC
Collector Power Dissipation
2
W
RθJA
Thermal Resistance From Junction To Ambient
63
℃/W
Tj
Junction Temperature
150
Tstg
Storage Temperature
-55~+150
www.cj-elec.com
1
B,Nov,2014


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