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FDN372S Fiches technique(PDF) 2 Page - Fairchild Semiconductor |
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FDN372S Fiches technique(HTML) 2 Page - Fairchild Semiconductor |
2 / 5 page FDN372S Rev C(W) Electrical Characteristics T A = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = 1 mA 30 V ∆BVDSS ∆T J Breakdown Voltage Temperature Coefficient ID = 10 mA, Referenced to 25 °C 24 mV/ °C IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 500 µA IGSS Gate–Body Leakage VGS = ±16 V, VDS = 0 V ±100 nA On Characteristics (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 1 mA 1 1.4 3 V ∆VGS(th) ∆T J Gate Threshold Voltage Temperature Coefficient ID = 10 mA, Referenced to 25 °C –3.2 mV/ °C RDS(on) Static Drain–Source On–Resistance VGS = 10 V, ID = 2.6 A VGS = 4.5 V, ID = 2.3 A VGS = 10V, ID = 2.6 A, TJ = 125 °C 32 36 45 40 50 60 m Ω ID(on) On–State Drain Current VGS = 10 V, VDS = 5 V 10 A gFS Forward Transconductance VDS = 10V, ID = 2.6 A 15 S Dynamic Characteristics Ciss Input Capacitance 630 pF Coss Output Capacitance 115 pF Crss Reverse Transfer Capacitance VDS = 15 V, V GS = 0 V, f = 1.0 MHz 45 pF Rg Gate Resistance V GS = 15 mV f = 1.0 MHz 2.4 Ω Switching Characteristics (Note 2) td(on) Turn–On Delay Time 7 14 ns tr Turn–On Rise Time 5 10 ns td(off) Turn–Off Delay Time 21 34 ns tf Turn–Off Fall Time VDD = 15 V, ID = 1 A, VGS = 10 V, RGEN = 6 Ω 2.7 5.4 ns Qg Total Gate Charge 5.8 8.1 nC Qgs Gate–Source Charge 1.3 1.9 nC Qgd Gate–Drain Charge VDS = 15 V, ID = 2.6 A, VGS = 5 V 1.2 1.7 nC Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current 0.7 A VSD Drain–Source Diode Forward Voltage VGS = 0 V, IS = 0.7 A (Note 2) 440 700 mV trr Diode Reverse Recovery Time 10 ns Qrr Diode Reverse Recovery Charge IF = 2.6 A, diF/dt = 300 A/µs (Note 2) 4 nC Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 250 °C/W when mounted on a 0.02 in2 pad of 2 oz. copper. b) 270°C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% |
Numéro de pièce similaire - FDN372S |
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Description similaire - FDN372S |
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