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FDN372S Fiches technique(PDF) 3 Page - Fairchild Semiconductor |
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FDN372S Fiches technique(HTML) 3 Page - Fairchild Semiconductor |
3 / 5 page FDN372S Rev C(W) Typical Characteristics 0 5 10 15 20 25 0 123 4 VDS, DRAIN TO SOURCE VOLTAGE (V) V GS = 10V 3.0V 2.5V 3.5V 4.5V 0.8 1 1.2 1.4 1.6 1.8 2 2.2 010 20 30 I D, DRAIN CURRENT (A) VGS = 2.5V 5.0V 45V 4.5V 3.5V 10V Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.6 0.8 1 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE ( oC) ID = 2.6A VGS = 10V 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.1 0.11 0.12 123456789 10 VGS, GATE TO SOURCE VOLTAGE (V) ID = 1.3A TA = 125 oC TA = 25 oC Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 0 2 4 6 8 10 0.5 1.5 2.5 3.5 4.5 VGS, GATE TO SOURCE VOLTAGE (V) TA = -55 oC 25 oC 125 oC VDS = 10V 0.0001 0.001 0.01 0.1 1 10 0.0 0.2 0.4 0.6 VSD, BODY DIODE FORWARD VOLTAGE (V) VGS = 0V TA = 125 oC 25 oC -55 oC Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. |
Numéro de pièce similaire - FDN372S |
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Description similaire - FDN372S |
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