KTA1273 datasheet(1/1 Pages) JIANGSU

No de pièce	KTA1273

Description	SOT-89-3L Plastic-Encapsulate Transistors

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Fabricant	JIANGSU [Jiangsu Changjiang Electronics Technology Co., Ltd]

Site Internet	http://www.cj-elec.com/en/

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A,Nov,2010

SOT-89-3L

1. BASE

2. COLLECTOR

3. EMITTER

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

SOT-89-3L Plastic-Encapsulate Transistors

KTA1273

TRANSISTOR (PNP)

FEATURES

High Current

Low Voltage

Complementary to KTC3205

MAXIMUM RATINGS (Ta=25

℃ unless otherwise noted)

ELECTRICAL CHARACTERISTICS (Ta=25

℃ unless otherwise specified)

Parameter

Symbol

Test conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

V(BR)CBO

IC=-1mA,IE=0

-30

V

Collector-emitter breakdown voltage

V(BR)CEO

IC=-10mA,IB=0

-30

V

Emitter-base breakdown voltage

V(BR)EBO

IE=-1mA,IC=0

-5

V

Collector cut-off current

ICBO

VCB=-30V,IE=0

-100

nA

Emitter cut-off current

IEBO

VEB=-5V,IC=0

-100

nA

DC current gain

hFE

VCE=-2V, IC=-0.5A

100

320

Collector-emitter saturation voltage

VCE(sat)

IC=-1.5A,IB=-30mA

-2

V

Base-emitter voltage

VBE

VCE=-2V, IC=-500mA

-1

V

Transition frequency

fT

VCE=-2V,IC=-500mA

120

MHz

Collector output capacitance

Cob

VCB=-10V, IE=0, f=1MHz

48

pF

CLASSIFICATION OF hFE

RANK

O

Y

RANGE

100–200

160–320

MARKING

1273

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage

-30

V

VCEO

Collector-Emitter Voltage

-30

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current

-2

A

PC

Collector Power Dissipation

500

mW

RθJA

Thermal Resistance From Junction To Ambient

250

℃/W

Tj

Junction Temperature

150

℃

Tstg

Storage Temperature

-55~+150

℃

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