BC817 datasheet(1/4 Pages) JIANGSU

No de pièce	BC817

Description	SOT-23 Plastic-Encapsulate Transistors

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Fabricant	JIANGSU [Jiangsu Changjiang Electronics Technology Co., Ltd]

Site Internet	http://www.cj-elec.com/en/

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TRANSISTOR (NPN)

For general AF applications

High collector current

High current gain

Low collector-emitter saturation voltage

Complementary types: BC807 (PNP)

a

℃

in

Typ

ax

Unit

VCBO

IC= 10μA, IE=0

50

V

VCEO

IC= 10mA, IB=0

45

V

VEBO

IE= 1μA, IC=0

5

V

ICBO

VCB= 45 V , IE=0

0.1

μA

IEBO

VEB= 4V, IC=0

0.1

μA

hFE(1)

VCE= 1V, IC= 100mA

100

600

hFE(2)

VCE= 1V, IC= 500mA

40

VCE(sat)

IC= 500mA, IB= 50mA

0.7

V

VBE(sat)

IC= 500mA, IB= 50mA

1.2

V

VBE

VCE= 1 V, IC= 500mA

1.2

V

Cob

VCB=10V ,f=1MHz

10

pF

fT

VCE= 5 V, IC= 10mA

f=100MHz

100

MHz

hFE

1. BASE

2. EMITTER

3. COLLECTOR

www.cj-elec.com

1

A,Jun,2014

www.cj-elec.com

D,Oct,2014

JC T

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage

50

V

VCEO

Collector-Emitter Voltage

45

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current

500

mA

PC

Collector Power Dissipation

300

mW

RΘJA

Thermal Resistance From Junction To Ambient

417

℃/W

Tj

Junction Temperature

150

℃

Tstg

Storage Temperature

-55～+150

℃

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