2SD2136 datasheet(2/4 Pages) JIANGSU

No de pièce	2SD2136

Description	TO-126 Plastic-Encapsulate Transistors

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Fabricant	JIANGSU [Jiangsu Changjiang Electronics Technology Co., Ltd]

Site Internet	http://www.cj-elec.com/en/

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2 / 4 page

Parameter

Symbol

Test

conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

V(BR)CBO

IC=100µA,IE=0

60

V

Collector-emitter breakdown voltage

V(BR)CEO

*

IC=30mA,IB=0

60

V

Emitter-base breakdown voltage

V(BR)EBO

IE= 100µA,IC=0

6

V

Collector cut-off current

ICBO

VCB=60V,IE=0

200

μA

Collector cut-off current

ICEO

VCE=60V,IB=0

300

μA

Emitter cut-off current

IEBO

VEB=6V,IC=0

1

mA

hFE(1)

*

VCE=4V, IC=1A

40

250

DC current gain

hFE(2)

*

VCE=4V, IC=3A

10

Collector-emitter saturation voltage

VCE(sat)

*

IC=3A,IB=0.375A

1.2

V

Base-emitter voltage

VBE

*

VCE=4V, IC=3A

1.8

V

Transition frequency

fT

VCE=5V,IC=0.1A, f=10MHz

30

MHz

*Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%.

CLASSIFICATION OF hFE(1)

RANK

P

Q

R

RANGE

40-90

70-150

120-250

(/(&75,&$/&+$5$&7(5,67,&6

a

T =25

unless otherwise specified

www.cj-elec.com

2

D,Aug,2017

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