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2SD0602 Datasheet(Fiches technique) 1 Page - Jiangsu Changjiang Electronics Technology Co., Ltd

Numéro de pièce 2SD0602
Description  SOT-23 Plastic-Encapsulate Transistors
Télécharger  3 Pages
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Fabricant  JIANGSU [Jiangsu Changjiang Electronics Technology Co., Ltd]
Site Internet  http://www.cj-elec.com/en/
Logo JIANGSU - Jiangsu Changjiang Electronics Technology Co., Ltd

2SD0602 Datasheet(HTML) 1 Page - Jiangsu Changjiang Electronics Technology Co., Ltd

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
2SD0602
TRANSISTOR (NPN)
FEATURES
 Low Collector To Emitter Saturation Voltage
 Mini Type Package
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
30
V
VCEO
Collector-Emitter Voltage
25
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current
500
mA
PC
Collector Power Dissipation
200
mW
RΘJA
Thermal Resistance From Junction To Ambient
625
℃/W
Tj
Junction Temperature
150
Tstg
Storage Temperature
-55~+150
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC=10µA, IE=0
30
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=10mA, IB=0
25
V
Emitter-base breakdown voltage
V(BR)EBO
IE=10µA, IC=0
5
V
Collector cut-off current
ICBO
VCB=20V, IE=0
0.1
µA
Emitter cut-off current
IEBO
VEB=5V, IC=0
0.1
µA
hFE(1) *
VCE=10V, IC=0.15A
85
340
DC current gain
hFE(2) *
VCE=10V, IC=0.5A
40
Collector-emitter saturation voltage
VCE(sat)*
IC=0.3A, IB=0.03A
0.6
V
Transition frequency
fT
VCE=10V,IC=0.05A, f=200MHz
200
MHz
Collector output capacitance
Cob
VCB=10V, IE=0, f=1MHz
15
pF
*Pulse test: pulse width ≤350μs, duty cycle≤ 2.0%.
CLASSIFICATION OF hFE(1)
RANK
Q
R
S
RANGE
85–170
120–240
170–340
MARKING
WQ1
WR1
WS1
SOT–23
1. BASE
2. EMITTER
3. COLLECTOR
www.cj-elec.com
1
A,Jun,2014
www.cj-elec.com
B,Oct,2014
JC T


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