BC550 datasheet(2/6 Pages) FOSHAN

No de pièce	BC550

Description	Silicon NPN transistor in a TO-92(R) Plastic Package

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Fabricant	FOSHAN [Foshan Blue Rocket Electronics Co.,Ltd.]

Site Internet	http://www.fsbrec.com/

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2 / 6 page

BC550

Rev.F Mar.-2016

DATA SHEET

http://www.fsbrec.com

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参数

Parameter

符号

Symbol

数值

Rating

单位

Unit

Collector to Base Voltage

VCBO

50

V

Collector to Emitter Voltage

VCEO

45

V

Emitter to Base Voltage

VEBO

5.0

V

Collector Current - Continuous

IC

100

mA

Collector Power Dissipation

PC

625

mW

Junction Temperature

Tj

150

℃

Storage Temperature Range

Tstg

-55～150

℃

电性能参数 / Electrical Characteristics(Ta=25℃)

参数

Parameter

符号

Symbol

测试条件

Test Conditions

最小值

Min

典型值

Typ

最大值

Max

单位

Unit

Collector to Emitter Breakdown

Voltage

VCEO

IC=10mA

IB=0

45

V

Collector to Base Breakdown

Voltage

VCBO

IC=10μA

IE=0

50

V

Emitter to Base Breakdown

Voltage

VEBO

IE=10μA

IC=0

5.0

V

Collector Cut-Off Current

ICBO

VCB=30V

IE=0

0.015

μA

DC Current Gain

hFE

VCE=5.0V

IC=2.0mA

110

800

Collector-Emitter Saturation

Voltage

VCE(sat) IC=100mA

IB=5.0mA

0.6

V

Base-Emitter Saturation Voltage

VBE(sat) IC=100mA

IB=5.0mA

0.9

V

Base-Emitter Voltage

VBE(on) VCE=5.0V

IC=2.0mA

0.55

0.7

V

Current Gain Bandwidth Product

fT

VCE=5.0V

IE=10mA

f=100MHz

300

MHz

Transition Frequency

Cob

VCB=10V

IE=0

f=1.0MHz

4.5

pF

Noise Figure

NF

VCE=5.0V

Rg=10KΩ

IC=200μA

f=1.0KHz

10

dB

极限参数 / Absolute Maximum Ratings(Ta=25℃)

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