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IPS0551T Fiches technique(PDF) 1 Page - International Rectifier

No de pièce IPS0551T
Description  FULLY PROTECTED POWER MOSFET SWITCH
Download  10 Pages
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Fabricant  IRF [International Rectifier]
Site Internet  http://www.irf.com
Logo IRF - International Rectifier

IPS0551T Fiches technique(HTML) 1 Page - International Rectifier

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Features
Over temperature shutdown
Over current shutdown
Active clamp
Low current & logic level input
E.S.D protection
IPS0551T
FULLY PROTECTED POWER MOSFET SWITCH
Data Sheet No. PD60160-A
Package
Product Summary
Typical Connection
Description
The IPS0551T is a fully protected three terminal SMART
POWER MOSFET that features over-current, over-tem-
perature, ESD protection, and drain to source active
clamp. This device combines a HEXFET® POWER
MOSFET and a gate driver. It offers full protection and
high reliability required in harsh environments. The driver
allows short switching times and provides efficient protec-
tion by turning OFF the power MOSFET when temperature
exceeds 165oC or when the drain current reaches 100A.
The device restarts once the input is cycled. The ava-
lanche capability is significantly enhanced by the active
clamp and covers most inductive load demagnetiza-
tions.
Rds(on)
5.2m
Ω (max)
V clamp
40V
Ishutdown
100A
Ton/Toff
4
µs
SUPER SMD220
Advance Information
SUPER TO220
L o a d
R in s e r ie s
( if n eed ed )
L ogic s ig n a l
IN
D
co n t r o l
S
www.irf.com
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Numéro de composants électroniques

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IPS021 FULLY PROTECTED POWER MOSFET SWITCH 1  2  3  4  5  More International Rectifier
IPS022G DUAL FULLY PROTECTED POWER MOSFET SWITCH 1  2  3  4  5  More International Rectifier
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