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KTB1124 Fiches technique(PDF) 2 Page - Foshan Blue Rocket Electronics Co.,Ltd.

No de pièce KTB1124
Description  Silicon PNP transistor in a SOT-89 Plastic Package
Download  6 Pages
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Fabricant  FOSHAN [Foshan Blue Rocket Electronics Co.,Ltd.]
Site Internet  http://www.fsbrec.com/
Logo FOSHAN - Foshan Blue Rocket Electronics Co.,Ltd.

KTB1124 Fiches technique(HTML) 2 Page - Foshan Blue Rocket Electronics Co.,Ltd.

  KTB1124 Datasheet HTML 1Page - Foshan Blue Rocket Electronics Co.,Ltd. KTB1124 Datasheet HTML 2Page - Foshan Blue Rocket Electronics Co.,Ltd. KTB1124 Datasheet HTML 3Page - Foshan Blue Rocket Electronics Co.,Ltd. KTB1124 Datasheet HTML 4Page - Foshan Blue Rocket Electronics Co.,Ltd. KTB1124 Datasheet HTML 5Page - Foshan Blue Rocket Electronics Co.,Ltd. KTB1124 Datasheet HTML 6Page - Foshan Blue Rocket Electronics Co.,Ltd.  
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KTB1124
Rev.E Mar.-2016
DATA SHEET
http://www.fsbrec.com
2 / 6
参数
Parameter
符号
Symbol
数值
Rating
单位
Unit
Collector to Base Voltage
VCBO
-60
V
Collector to Emitter Voltage
VCEO
-50
V
Emitter to Base Voltage
VEBO
-6.0
V
Collector Current - Continuous
IC
-3.0
A
Collector Current – Continuous(Pluse)
ICP
-6.0
A
Collector Power Dissipation
PC
500
mW
Collector Power Dissipation*
*PC(Tc=25℃)
1.0
W
Junction Temperature
Tj
150
Storage Temperature Range
Tstg
-55~150
*:Package mounted on ceramic substrate(250mm2×0.8t)
参数
Parameter
符号
Symbol
测试条件
Test Conditions
最小值
Min
典型值
Typ
最大值
Max
单位
Unit
Collector to Base Breakdown
Voltage
VCBO
IC=-10μA
IE=0
-60
V
Collector to Emitter Breakdown
Voltage
VCEO
IC=-1.0mA
IB=0
-50
V
Emitter to Base Breakdown Voltage
VEBO
IE=-10μA
IC=0
-6.0
V
Collector Cut-Off Current
ICBO
VCB=-40V
IE=0
-1.0
μA
Emitter Base Cut-Off Current
IEBO
VEB=-4.0V
IC=0
-1.0
μA
DC Current Gain
hFE(1)
VCE=-2.0V
IC=-100mA
100
400
hFE(2)
VCE=-2.0V
IC=-3.0A
35
Collector to Emitter Saturation
Voltage
VCE(sat) IC=-2.0A
IB=-100mA
-0.35
-0.7
V
Base to Emitter Saturation Voltage
VBE(sat) IC=-2.0A
IB=-100mA
-0.94
-1.2
V
Transition Frequency
fT
VCE=-10V
IC=-50mA
150
MHz
Collector Output Capacitance
Cob
VCB=-10V
f=1MHz
39
pF
Turn-On Time
ton
-101B1=101B2=IC=1.0A
70
nS
Storage Time
tstg
450
nS
Fall Time
tf
35
nS
极限参数 / Absolute Maximum Ratings(Ta=25℃)
电性能参数 / Electrical Characteristics(Ta=25℃)


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