BF820 datasheet(2/6 Pages) FOSHAN

No de pièce	BF820

Description	Silicon NPN transistor in a SOT-23 Plastic Package

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Fabricant	FOSHAN [Foshan Blue Rocket Electronics Co.,Ltd.]

Site Internet	http://www.fsbrec.com/

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2 / 6 page

BF820

Rev.F Apr.-2017

DATA SHEET

http://www.fsbrec.com

2 / 6

参数

Parameter

符号

Symbol

数值

Rating

单位

Unit

Collector to Base Voltage

VCBO

300

V

Collector to Emitter Voltage

VCEO

300

V

Emitter to Base Voltage

VEBO

5.0

V

Collector Current - Continuous

IC

50

mA

Peak Collector Current - Continuous

ICM

100

mA

Base Current

IB

50

mA

Collector Power Dissipation

PC

250

mW

Junction Temperature

Tj

150

℃

Storage Temperature Range

Tstg

-55～150

℃

参数

Parameter

符号

Symbol

测试条件

Test Conditions

最小值

Min

典型值

Typ

最大值

Max

单位

Unit

Collector to Base Breakdown

Voltage

VCBO

IC=100μA

IE=0

300

V

Collector to Emitter Breakdown

Voltage

VCEO

IC=1.0mA

IB=0

300

V

Emitter to Base Breakdown

Voltage

VEBO

IE=100μA

IC=0

5.0

V

Collector Cut-Off Current

ICBO

VCB=200V

IE=0

0.01

μA

Emitter Cut-Off Current

IEBO

VEB=5.0V

IC=0

0.05

μA

DC Current Gain

hFE

VCE=20V

IC=25mA

50

Collector to Emitter Saturation

Voltage

VCE(sat)

IC=30mA

IB=5.0mA

0.6

V

Feedback Capacitance

Cre

VCB=30V

IE=0

f=1.0MHz

1.6

pF

Transition Frequency

fT

VCE=10V

IC=10mA

f=100MHz

60

MHz

*脉冲测试：脉宽≤300μS，占空比≤2.0%。

*pulse test: pulse width≤300μS,duty cycle≤2.0%.

极限参数 / Absolute Maximum Ratings(Ta=25℃)

电性能参数 / Electrical Characteristics(Ta=25℃)

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