2SC1741AM datasheet(2/6 Pages) FOSHAN

No de pièce	2SC1741AM

Description	Silicon NPN transistor in a SOT-23 Plastic Package

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Fabricant	FOSHAN [Foshan Blue Rocket Electronics Co.,Ltd.]

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2 / 6 page

2SC1741AM

Rev.F Apr.-2017

DATA SHEET

http://www.fsbrec.com

2 / 6

参数

Parameter

符号

Symbol

数值

Rating

单位

Unit

Collector to Base Voltage

VCBO

50

V

Collector to Emitter Voltage

VCEO

50

V

Emitter to Base Voltage

VEBO

5.0

V

Collector Current

IC

0.5

A

Collector Power Dissipation

PC

0.3

W

Junction Temperature

Tj

150

℃

Storage Temperature Range

Tstg

-55～150

℃

参数

Parameter

符号

Symbol

测试条件

Test Conditions

最小值

Min

典型值

Typ

最大值

Max

单位

Unit

Collector-Base Breakdown

voltage

VCBO

IC=100μA

IE=0

50

V

Collector-Emitter Breakdown

Voltage

VCEO

IC=1.0mA

IB=0

50

V

Emitter-Base Breakdown Voltage

VEBO

IE=100μA

IC=0

5.0

V

Collector Cut-Off Current

ICBO

VCB=30V

IE=0

0.5

μA

Emitter Base Cut-Off Current

IEBO

VEB=4.0V

Ic=0

0.5

μA

DC Current Gain

hFE

VCE=3.0V

IC=0.1A

120

390

Collector to Emitter Saturation

Voltage

VCE(sat)

Ic=150mA

IB=15mA

0.4

V

Transition Frequency

fT

VCE=5.0V

IE=20mA

f=100MHz

250

MHz

Collector Output Capacitance

Cob

VCB=10V

IE=0

f=1.0MHz

6.5

pF

极限参数 / Absolute Maximum Ratings(Ta=25℃)

电性能参数 / Electrical Characteristics(Ta=25℃)

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