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BFC11 Fiches technique(PDF) 1 Page - Seme LAB

No de pièce BFC11
Description  4TH GENERATION MOSFET N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE ISOLATED POWER MOSFETS
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Fabricant  SEME-LAB [Seme LAB]
Site Internet  http://www.semelab.co.uk
Logo SEME-LAB - Seme LAB

BFC11 Fiches technique(HTML) 1 Page - Seme LAB

  BFC11 Datasheet HTML 1Page - Seme LAB BFC11 Datasheet HTML 2Page - Seme LAB  
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Characteristic
Test Conditions
Min.
Typ.
Max. Unit
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 1/94
BVDSS
ID(ON)
RDS(ON)
IDSS
IGSS
VGS(TH)
VDSS
ID
IDM , ILM
VGS
PD
TJ , TSTG
TL
1
3
4
2
R
38.0 (1 .496)
38.2 (1 .504)
30.1 (1 .1 8 5 )
3 0 .3 (1 .193 )
14.9 (0 .5 87)
15.1 (0 .5 94)
3 .3 (0 .129 )
3 .6 (0 .1 43)
7.8 (0 .3 0 7 )
8.2 (0 .3 2 2 )
3 1 .5 (1 .240 )
3 1 .7 (1 .248 )
4.0 (0 .1 5 7 )
(2 P la c e s)
R =
4.0 (0 .1 57 )
4.2 (0 .1 65 )
)
)
4.1 (0 .1 61
4.3 (0 .1 69
4.8 (0 .1 87 )
4.9 (0 .1 93 )
(4 places)
W =
H =
8.9 (0 .3 50)
9.6 (0 .3 78)
11 .8 (0 .463)
12 .2 (0 .480)
Hex Nut M 4
(4 places)
0.75 (0 .0 30 )
0.85 (0 .0 33 )
5.1 (0 .2 01 )
5.9 (0 .2 32 )
1.95 (0 .0 77)
2.1 4 (0 .0 84 )
SOT–227 Package Outline.
Dimensions in mm (inches)
Drain – Source Voltage
Continuous Drain Current
Pulsed Drain Current 1 and Inductive Current Clamped
Gate – Source Voltage
Total Power Dissipation @ Tcase = 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature : 0.063” from Case for 10 Sec.
VGS = 0V , ID = 250µA
VDS > ID(ON) x RDS(ON) Max
VGS = 10V
VGS =10V , ID = 0.5 ID [Cont.]
VDS = VDSS
VDS = 0.8VDSS , TC = 125°C
VGS = ±30V , VDS = 0V
VDS = VGS , ID = 2.5mA
N–CHANNEL
ENHANCEMENT MODE
HIGH VOLTAGE
ISOLATED
POWER MOSFETS
800
27
108
±30
520
4.16
–55 to 150
300
V
A
A
V
W
W / °C
°C
Drain – Source Breakdown Voltage
On State Drain Current 2
Drain – Source On State Resistance 2
Zero Gate Voltage Drain Current
(VGS = 0V)
Gate – Source Leakage Current
Gate Threshold Voltage
800
27
0.30
250
1000
±100
24
V
A
µA
nA
V
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Pulse Test: Pulse Width < 380
µS , Duty Cycle < 2%
STATIC ELECTRICAL RATINGS (Tcase = 25°C unless otherwise stated)
BFC11
LAB
SEME
VDSS
800V
ID(cont)
27A
RDS(on)
0.30
* Source 2 may be omitted,
shorted to Source 1 or used for
Gate drive circuit.
4TH GENERATION MOSFET
Terminal 1
Source 2*
Terminal 2
Drain
Terminal 3
Gate
Terminal 4
Source 1


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