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LM4917SD Fiches technique(PDF) 4 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
No de pièce LM4917SD
Description  Ground-Referenced, 95mW Stereo Headphone Amplifier
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Fabricant  NSC [National Semiconductor (TI)]
Site Internet  http://www.national.com
Logo NSC - National Semiconductor (TI)

LM4917SD Fiches technique(HTML) 4 Page - National Semiconductor (TI)

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Absolute Maximum Ratings (Note 2)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Supply Voltage
4.0V
Storage Temperature
−65˚C to +150˚C
Input Voltage
-0.3V to V
DD + 0.3V
Power Dissipation (Note 3)
Internally Limited
ESD Susceptibility (Note 4)
2000V
ESD Susceptibility (Note 5)
200V
Junction Temperature
150˚C
Thermal Resistance
θ
JC (TSSOP)
40˚C/W
θ
JA (TSSOP)
109˚C/W
Operating Ratings
Temperature Range
T
MIN
≤ T
A
≤ T
MAX
−40˚C
≤ T
A
≤ 85˚C
Supply Voltage (V
DD)
1.4V
≤ V
CC
≤ 3.6V
Electrical Characteristics V
DD =3V (Notes 1, 2)
The following specifications apply for V
DD = 3V, AV = 1, and 16
Ω load unless otherwise specified. Limits apply to T
A = 25˚C.
Symbol
Parameter
Conditions
LM4917
Units
(Limits)
Typ
(Note 6)
Limit
(Notes 7,
8)
I
DD
Quiescent Power Supply Current
V
IN = 0V, IO = 0A, both channels
enabled
11
20
mA (max)
V
IN = 0V, IO = 0A, one channel
enabled
9mA
I
SD
Shutdown Current
V
SD_LC =VSD_RC = GND
0.01
1
µA (max)
V
OS
Output Offset Voltage
R
L =32
1
10
mV (max)
P
O
Output Power
THD+N = 1% (max); f = 1kHz, R
L =
16
95
50
mW (min)
THD+N = 1% (max); f = 1kHz, R
L =
32
82
mW
THD+N
Total Harmonic Distortion + Noise P
O = 50mW, f = 1kHz, RL =32
(A-weighted) single channel
0.02
%
PSRR
Power Supply Rejection Ratio
V
RIPPLE = 200mV sine p-p,
f = 1kHz
f = 20kHz
70
55
dB
SNR
Signal-to-Noise Ratio
R
L =32
Ω,P
OUT = 20mW, f = 1kHz
100
dB
V
IH
Shutdown Input Voltage High
V
IH =
0.7*CPV
DD
V (min)
V
IL
Shutdown Input Voltage Low
V
IL =
0.3*CPV
DD
V (max)
T
WU
Wake Up Time From Shutdown
339
µs (max)
X
TALK
Crosstalk
R
L =16
Ω,P
O = 1.6mW, f = 1kHz
70
dB
I
L
Input Leakage Current
±0.1
nA
Note 1: All voltages are measured with respect to the GND pin unless otherwise specified.
Note 2: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
functional but do not guarantee specific performance limits. Electrical Characteristics state DC and AC electrical specifications under particular test conditions that
guarantee specific performance limits. This assumes that the device is within the Operating Ratings. Specifications are not guaranteed for parameters where no limit
is given; however, the typical value is a good indication of device performance.
Note 3: The maximum power dissipation must be derated at elevated temperatures and is dictated by TJMAX, θJA, and the ambient temperature, TA. The maximum
allowable power dissipation is PDMAX =(TJMAX -TA)/ θJA or the number given in Absolute Maximum Ratings, whichever is lower. For the LM4917, see power
de-rating currents for more information.
Note 4: Human body model, 100pF discharged through a 1.5k
Ω resistor.
Note 5: Machine Model, 220pF-240pF discharged through all pins.
Note 6: Typicals are measured at 25˚C and represent the parametric norm.
Note 7: Limits are guaranteed to National’s AOQL (Average Outgoing Quality Level).
Note 8: Datasheet min/max specification limits are guaranteed by design, test, or statistical analysis.
Note 9: If the product is in shutdown mode and VDD exceeds 3.6V (to a max of 4V VDD) then most of the excess current will flow through the ESD protection circuits.
If the source impedance limits the current to a max of 10mA, then the part will be protected. If the part is enabled when VDD is above 4V circuit performance will
be curtailed or the part may be permanently damaged.
Note 10: Human body model, 100pF discharged through a 1.5k
Ω resistor.
www.national.com
4


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