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KSE13009F Fiches technique(PDF) 1 Page - Fairchild Semiconductor

No de pièce KSE13009F
Description  High Voltage Switch Mode Application
Download  5 Pages
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Fabricant  FAIRCHILD [Fairchild Semiconductor]
Site Internet  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

KSE13009F Fiches technique(HTML) 1 Page - Fairchild Semiconductor

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©2000 Fairchild Semiconductor International
Rev. A, February 2000
NPN Silicon Transistor
Absolute Maximum Ratings T
C=25°C unless otherwise noted
Electrical Characteristics T
C=25°C unless otherwise noted
* Pulse Test: PW
≤300µs, Duty Cycle≤2%
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
700
V
V CEO
Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
9
V
IC
Collector Current (DC)
12
A
ICP
Collector Current (Pulse)
24
A
IB
Base Current
6
A
PC
Collector Dissipation (TC=25°C)
50
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
-65 ~ 150
°C
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
VCEO(sus)
Collector-Emitter Sustaining Voltage
IC = 10mA, IB = 0
400
V
IEBO
Emitter Cut-off Current
VEB = 7V, IC = 0
1
mA
hFE
DC Current Gain
VCE = 5V, IC = 5A
VCE = 5V, IC = 8A
8
6
40
30
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 5A, IB = 1A
IC = 8A, IB = 1.6A
IC = 12A, IB = 3A
1
1.5
3
V
V
V
VBE(sat)
Base-Emitter Saturation Voltage
IC = 5A, IB = 1A
IC = 8A, IB = 1.6A
1.2
1.6
V
V
Cob
Output Capacitance
VCB = 10V , f = 0.1MHz
180
pF
fT
Current Gain Bandwidth Product
VCE = 10V, IC = 0.5A
4
MHz
tON
Turn ON Time
VCC =125V, IC = 8A
IB1 = - IB2 = 1.6A
RL = 15,6Ω
1.1
µs
tSTG
Storage Time
3
µs
tF
Fall Time
0.7
µs
High Voltage Switch Mode Application
• High Speed Switching
• Suitable for Switching Regulator and Motor Control
KSE13009F
1
1.Base
2.Collector
3.Emitter
TO-220F


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