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1N1184 Fiches technique(PDF) 1 Page - Naina Semiconductor ltd.

No de pièce 1N1184
Description  Standard Recovery Diode, 35A
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Fabricant  NAINA [Naina Semiconductor ltd.]
Site Internet  http://www.nainasemi.com
Logo NAINA - Naina Semiconductor ltd.

1N1184 Fiches technique(HTML) 1 Page - Naina Semiconductor ltd.

  1N1184 Datasheet HTML 1Page - Naina Semiconductor ltd. 1N1184 Datasheet HTML 2Page - Naina Semiconductor ltd.  
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Naina Semiconductor Ltd.
1N1183 thru
1N1186R
1
D-95, Sector 63, Noida – 201301, India
Tel: 0120-4205450
Fax: 0120-4273653
sales@nainasemi.com
www.nainasemi.com
Standard Recovery Diode, 35A
Features
Glass passivated die
Low forward voltage drop
High surge capability
Low leakage current
Normal and Reverse polarity
Metric and UNF threads available
Maximum Ratings (TJ = 25oC, unless otherwise noted)
Parameter
Test Conditions
Symbol
1N1183(R)
1N1184(R)
1N1185(R)
1N1186(R)
Units
Repetitive peak
reverse voltage
VRRM
50
100
150
200
V
RMS reverse voltage
VRMS
35
70
105
140
V
DC blocking voltage
VDC
50
100
150
200
V
Continuous forward
current
TC ≤ 140oC
IF(AV)
35
35
35
35
A
Surge non-repetitive
forward current,
half-sine wave
TC = 25oC
IFSM
595
595
595
595
A
Maximum peak
forward voltage
IF = 35 A, TJ = 25oC
VF
1.2
1.2
1.2
1.2
V
Reverse current
TJ = 25oC
IR
10
10
10
10
µA
TJ = 140oC
10
10
10
10
mA
Thermal & Mechanical Specifications (TJ = 25oC, unless otherwise noted)
Parameters
Symbol
1N1183(R)
1N1184(R)
1N1185(R)
1N1186(R)
Units
Thermal resistance, junction to case
Rth(JC)
0.25
0.25
0.25
0.25
oC/W
Operating junction temperature range
TJ
-55 to 160
-55 to 160
-55 to 160
-55 to 160
oC
Storage temperature
Tstg
-55 to 160
-55 to 160
-55 to 160
-55 to 160
oC
Mounting torque, non-lubricated threads,
tighting on nut
F
3.4 ± 10%
Nm
Approximate weight
W
16
g
DO-203AB (DO-5)


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