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BD112 Fiches technique(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BD112 Fiches technique(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 2 page INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon NPN Power Transistor BD112 DESCRIPTION · Excellent Safe Operating Area · Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) · Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC = 5A · Good Linearity of hFE · Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS · Designed for general-purpose switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 12 A ICM Collector Current-Peak 15 A IB Base Current-Continuous 2 A PC Collector Power Dissipation@TC=75℃ 15 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ |
Numéro de pièce similaire - BD112 |
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Description similaire - BD112 |
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