AO8802 datasheet(1/6 Pages) ETC

No de pièce	AO8802

Description	Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

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Symbol

VDS

VGS

IDM

TJ, TSTG

Symbol

Typ

Max

64

83

89

120

RθJL

53

70

W

Maximum Junction-to-Lead

C

Steady-State

°C/W

Thermal Characteristics

Parameter

Units

Maximum Junction-to-Ambient

A

t ≤ 10s

RθJA

°C/W

Maximum Junction-to-Ambient

A

Steady-State

°C/W

±12

Gate-Source Voltage

Drain-Source Voltage

20

Continuous Drain

Current

A

Maximum

Units

Parameter

TA=25°C

TA=70°C

Absolute Maximum Ratings TA=25°C unless otherwise noted

V

6.3

30

Pulsed Drain Current

B

Power Dissipation

A

TA=25°C

Junction and Storage Temperature Range

A

PD

°C

1.5

1.08

-55 to 150

TA=70°C

ID

8

AO8802

Common-Drain Dual N-Channel Enhancement Mode Field

Effect Transistor

August 2002

Features

VDS (V) = 20V

ID = 8A

RDS(ON) < 13mΩ (VGS = 10V)

RDS(ON) < 14mΩ (VGS = 4.5V)

RDS(ON) < 19mΩ (VGS = 2.5V)

RDS(ON) < 27mΩ (VGS = 1.8V)

General Description

The AO8802 uses advanced trench technology to

provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 1.8V while

retaining a 12V VGS(MAX) rating. This device is suitable

for use as a uni-directional or bi-directional load

switch, facilitated by its common-drain configuration.

G1

S1

D1/D2

G2

S2

D1/D2

1

2

3

4

8

7

6

5

G1

D1

S1

G2

D2

S2

TSSOP-8

Top View

Alpha & Omega Semiconductor, Ltd.

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