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INA826S Fiches technique(PDF) 21 Page - Texas Instruments |
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INA826S Fiches technique(HTML) 21 Page - Texas Instruments |
21 / 40 page G=1+ 49.4kW R G 21 INA826S www.ti.com SBOS770A – MAY 2017 – REVISED JUNE 2017 Product Folder Links: INA826S Submit Documentation Feedback Copyright © 2017, Texas Instruments Incorporated Feature Description (continued) 7.3.2 Setting the Gain Gain of the INA826S is set by a single external resistor, RG, connected between pins 2 and 3. Use Equation 1 to select the value of RG: (1) Table 1 lists several commonly-used gains and resistor values. The 49.4-k Ω term in Equation 1 comes from the sum of the two internal 24.7-kΩ feedback resistors. These on-chip resistors are laser-trimmed to accurate absolute values. The accuracy and temperature coefficients of these resistors are included in the gain accuracy and drift specifications of the INA826S. Table 1. Commonly-Used Gains and Resistor Values DESIRED GAIN (V/V) RG (Ω) NEAREST 1% RG (Ω) 1 — — 2 49.4 k 49.9 k 5 12.35 k 12.4 k 10 5.489 k 5.49 k 20 2.600 k 2.61 k 50 1.008 k 1 k 100 499 499 200 248 249 500 99 100 1000 49.5 49.9 7.3.2.1 Gain Drift The stability and temperature drift of the external gain setting resistor, RG, also affects gain. The contribution of RG to gain accuracy and drift can be directly inferred from the gain of Equation 1. The best gain drift of 1 ppm/ ℃ can be achieved when the INA826S uses G = 1 without RG connected. In this case, the gain drift is limited only by the slight mismatch of the temperature coefficient of the integrated 50-kΩ resistors in the differential amplifier (A3). At G greater than 1, the gain drift increases as a result of the individual drift of the 24.7-kΩ resistors in the feedback of A1 and A2, relative to the drift of the external gain resistor RG. Process improvements of the temperature coefficient of the feedback resistors now make possible specifying a maximum gain drift of the feedback resistors of 35 ppm/ ℃, thus significantly improving the overall temperature stability of applications using gains greater than 1. Low resistor values required for high gain can make wiring resistance important. Sockets add to the wiring resistance and contribute additional gain error (such as a possible unstable gain error) at gains of approximately 100 or greater. To ensure stability, avoid parasitic capacitance of more than a few picofarads at RG connections. Careful matching of any parasitics on both RG pins maintains optimal CMRR over frequency; see typical characteristic curves Figure 22 and Figure 23. |
Numéro de pièce similaire - INA826S |
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Description similaire - INA826S |
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