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ACE6802B Fiches technique(PDF) 1 Page - ACE Technology Co., LTD. |
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ACE6802B Fiches technique(HTML) 1 Page - ACE Technology Co., LTD. |
1 / 6 page ACE6802B N-Channel Enhancement Mode Power MOSFET VER 1.1 1 Description ACE6802B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Features VDS=80V, ID=110A RDS(ON)1@VGS=10V, TYP 4.5mΩ Absolute Maximum Ratings Parameter Symbol Max Unit Drain-Source Voltage VDSS 80 V Gate-Source Voltage VGSS ±20 V Drain Current (Continuous)*AC TA=25℃ ID 110 A TA=100℃ 70 Drain Current (Pulsed)*B IDM 300 A Power Dissipation TA=25℃ PD 80 W Operating temperature / storage temperature TJ/TSTG -55~150 ℃ A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C: The current rating is based on the t≤ 10s junction to ambient thermal resistance rating. Packaging Type DFN5*6-EP Ordering information ACE6802B XX + H PN: DFN5*6-EP Pb - free Halogen - free |
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