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Moteur de recherche de fiches techniques de composants électroniques |
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Moteur de recherche de fiches techniques de composants électroniques |
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SI7450DP Fiches technique(PDF) 2 Page - Vishay Siliconix |
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SI7450DP Fiches technique(HTML) 2 Page - Vishay Siliconix |
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2 / 4 page  Si7450DP Vishay Siliconix New Product www.vishay.com 2 Document Number: 71432 S-03475—Rev. B, 16-Apr-01 SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA 2.0 V Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V "100 nA VDS = 160 V, VGS = 0 V 1 m Zero Gate Voltage Drain Current IDSS VDS = 160 V, VGS = 0 V, TJ = 55_C 5 mA On-State Drain Currenta ID(on) VDS w 5 V, VGS = 10 V 40 A VGS = 10 V, ID = 4.0 A 0.065 0.080 W Drain-Source On-State Resistancea rDS(on) VGS = 6.0 V, ID = 4.0 A 0.070 0.090 W Forward Transconductancea gfs VDS = 15 V, ID = 5 A 19 S Diode Forward Voltagea VSD IS = 2.8 A, VGS = 0 V 0.75 1.2 V Dynamicb Total Gate Charge Qg 34 42 Gate-Source Charge Qgs VDS = 100 V, VGS = 10 V, ID = 4.0 A 7.5 nC Gate-Drain Charge Qgd 12.0 Turn-On Delay Time td(on) 14 20 Rise Time tr V = 100 V, R = 25 W 20 30 Turn-Off Delay Time td(off) VDD = 100 V, RL = 25 W ID ^ 4.0 A, VGEN = 10 V, RG = 6 W 32 50 ns Fall Time tf 25 35 Gate Resistance Rg 0.85 W Source-Drain Reverse Recovery Time trr IF = 2.8 A, di/dt = 100 A/ms 70 100 ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0 5 10 15 20 25 30 35 40 0123456 0 8 16 24 32 40 02468 10 VGS = 10 thru 6 V TC = 125_C –55 _C 25 _C Output Characteristics Transfer Characteristics VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V) 5 V 4 V |
Numéro de pièce similaire - SI7450DP |
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Description similaire - SI7450DP |
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