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NBSG11 Fiches technique(PDF) 6 Page - ON Semiconductor |
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NBSG11 Fiches technique(HTML) 6 Page - ON Semiconductor |
6 / 10 page NBSG11 http://onsemi.com 6 Table 7. DC CHARACTERISTICS, NECL OR RSNECL INPUT WITH NECL OUTPUT VCC = 0 V; VEE = -3.465 V to -2.375 V (Note 18) -40 °C 25 °C 70 °C(BGA)/85°C(QFN)** Symbol Characteristic Min Typ Max Min Typ Max Min Typ Max Unit IEE Negative Power Supply Current 45 60 75 45 60 75 45 60 75 mA VOH Output HIGH Voltage (Note 19) -1050 -970 -925 -975 -935 -900 -950 -910 -875 mV VOUTPP Output Amplitude Voltage 350 410 525 350 410 525 350 410 525 mV VIH Input HIGH Voltage (Single-Ended) (Note 21) VCC- 1435 mV VCC- 1000 mV* VCC VCC- 1435 mV VCC- 1000 mV* VCC VCC- 1435 mV VCC- 1000 mV* VCC V VIL Input LOW Voltage (Single-Ended) (Note 22) VIH- 2.5 V VCC- 1400 mV* VIH- 150 mV VIH- 2.5 V VCC- 1400 mV* VIH- 150 mV VIH- 2.5 V VCC- 1400 mV* VIH- 150 mV V VIHCMR Input HIGH Voltage Common Mode Range (Differential Configuration) (Note 20) VEE+1.2 0.0 VEE+1.2 0.0 VEE+1.2 0.0 V RTIN Internal Input Termination Resistor 45 50 55 45 50 55 45 50 55 W IIH Input HIGH Current (@ VIH, VIHMAX) 80 150 80 150 80 150 mA IIL Input LOW Current (@ VIL, VILMIN) 25 100 25 100 25 100 mA NOTE: SiGe circuits are designed to meet the DC specifications shown in the above table after thermal equilibrium has been established. The circuit is in a test socket or mounted on a printed circuit board and transverse airflow greater than 500lfpm is maintained. 18. Input and output parameters vary 1:1 with VCC. 19. All loading with 50 W to VCC - 2.0 V. VOH/VOL measured at VIH/VIL. 20. VIHCMR min varies 1:1 with VEE, VIHCMR max varies 1:1 with VCC. The VIHCMR range is referenced to the most positive side of the differential input signal. 21. VIH cannot exceed VCC. 22. VIL always ≥ VEE. *Typicals used for testing purposes. **The device packaged in FCBGA-16 have maximum temperature specification of 70 °C and devices packaged in QFN-16 have maximum temperature specification of 85 °C. Table 8. AC CHARACTERISTICS for FCBGA-16 VCC = 0 V; VEE = -3.465 V to -2.375 V or VCC = 2.375 V to 3.465 V; VEE = 0 V -40 °C 25 °C 70 °C Symbol Characteristic Min Typ Max Min Typ Max Min Typ Max Unit fmax Maximum Frequency (See Figure 4. Fmax/JITTER) (Note 23) 10.709 12 10.709 12 10.709 12 GHz tPLH, tPHL Propagation Delay to Output Differential 90 125 160 90 125 160 90 125 160 ps tSKEW Duty Cycle Skew (Note 24) Within-Device Skew (Note 25) Device-to-Device Skew (Note 26) 3 6 25 15 15 50 3 6 25 15 15 50 3 6 25 15 15 50 ps tJITTER RMS Random Clock Jitter fin < 10 GHz Peak-to-Peak Data Dependent Jitter fin < 10 Gb/s 0.2 TBD 1 0.2 TBD 1 0.2 TBD 1 ps VINPP Input Voltage Swing/Sensitivity (Differential Configuration) (Note 27) 75 2600 75 2600 75 2600 mV tr tf Output Rise/Fall Times Q, Q (20% - 80%) @ 1 GHz 20 30 55 20 30 55 20 30 55 ps 23. Measured using a 500 mV source, 50% duty cycle clock source. All loading with 50 W to VCC-2.0 V. For minimum fmax value of 10.709 GHz, output amplitude is approximately 200 mV (as shown in Figure 4, where output P-P spec is shown as a minimum/guarantee of around 150 mV). Input edge rates 40 ps (20% - 80%). 24. See Figure 5. tSKEW = |tPLH - tPHL| for a nominal 50% Differential Clock Input Waveform. 25. Within-Device skew is defined as identical transitions on similar paths through a device. 26. Device-to-device skew for identical transitions at identical VCC levels. 27. VINPP (MAX) cannot exceed VCC - VEE. |
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