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MPSA62 Fiches technique(PDF) 1 Page - Central Semiconductor Corp |
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MPSA62 Fiches technique(HTML) 1 Page - Central Semiconductor Corp |
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1 / 1 page MPSA62 MPSA65 MPSA63 MPSA66 MPSA64 SILICON PNP DARLINGTON TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR MPSA62 series devices are silicon PNP Darlington transistors, manufactured by the epitaxial planar process, designed for applications requiring extremely high gain. MARKING: FULL PART NUMBER TO-92 CASE MPSA63 MPSA65 UNITS MAXIMUM RATINGS: (TA=25°C) SYMBOL MPSA62 MPSA64 MPSA66 UNITS Collector-Base Voltage VCBO 20 30 30 V Collector-Emitter Voltage VCES 20 30 30 V Emitter-Base Voltage VEBO 10 10 8.0 V Continuous Collector Current IC 500 mA Power Dissipation PD 625 mW Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C Thermal Resistance JA 200 °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) MPSA62 MPSA63 MPSA64 MPSA65 MPSA66 SYMBOL TEST CONDITIONS MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX UNITS ICBO VCB=15V - 100 - - - - - - - - nA ICBO VCB=30V - - - 100 - 100 - 100 - 100 nA IEBO VEB=10V - 100 - 100 - 100 - - - - nA IEBO VEB=8.0V - - - - - - - 100 - 100 nA BVCES IC=100μA 20 - 30 - 30 - 30 - 30 - V VCE(SAT) IC=10mA, IB=10μA - 1.0 - - - - - - - - V VCE(SAT) IC=100mA, IB=0.1mA - - - 1.5 - 1.5 - 1.5 - 1.5 V VBE(ON) VCE=5.0V, IB=10mA - 1.4 - - - - - - - - V VBE(ON) VCE=5.0V, IB=100mA - - - 2.0 - 2.0 - 2.0 - 2.0 V hFE VCE=5.0V, IC=10mA 20K - 5K - 10K - 50K - 75K - hFE VCE=5.0V, IC=100mA - - 10K - 20K - 20K - 40K - fT VCE=5.0V, IC=100mA, f=100MHz - - 125 - 125 - - - - - MHz fT VCE=10V, IC=30mA, f=50MHz - - - - - - 100 - 100 - MHz Cob VCB=10V, IE=0, f=100kHz 2.5 (TYP) 2.5 (TYP) 2.5 (TYP) 2.5 (TYP) 2.5 (TYP) pF NF VCE=5.0V, IC=1.0mA, RS=100kΩ, f=1.0kHz 2.0 (TYP) 2.0 (TYP) 2.0 (TYP) 2.0 (TYP) 2.0(TYP) dB R1 (18-March 2014) www.centr a lsemi.com |
Numéro de pièce similaire - MPSA62 |
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Description similaire - MPSA62 |
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