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NTE100 Fiches technique(PDF) 2 Page - NTE Electronics

No de pièce NTE100
Description  Germanium Complementary Transistors Oscillator, Mixer for AM Radio, Medium Speed Switch
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Fabricant  NTE [NTE Electronics]
Site Internet  http://www.nteinc.com
Logo NTE - NTE Electronics

NTE100 Fiches technique(HTML) 2 Page - NTE Electronics

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Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Emitter Cutoff Current
NTE100
IEBO
IC = 0
VEB = 2.5V
1
2.5
µA
NTE101
VEB = 25V
2
6
µA
Static Forward Current Transfer Ratio
NTE100
hFE
VCE = 0.15V, IC = 12mA
30
100
VCE = 0.20V, IC = 24mA
24
110
NTE101
VCE = 1V, IC = 10mA
20
100
VCE = 0.35V, IC = 200mA
10
100
Base–Emitter Voltage
NTE100
VBE
IB = 0.4mA, IC = 12mA
0.26
0.35
V
IB = 1mA, IC = 24mA
0.30
0.40
V
NTE101
IB = 0.5mA, IC = 10mA
0.15
0.22
0.40
V
Collector–Emitter Saturation Voltage
NTE100
VCE(sat)
IB = 0.4mA, IC = 12mA
0.08
0.15
V
IB = 1mA, IC = 24mA
0.08
0.20
V
NTE101
IB = 0.5mA, IC = 10mA
0.07
0.20
V
Small–Signal Forward Current Transfer Ratio
NTE100
hfe
VCE = 6V IC = 1mA, f = 1kHz
135
NTE101
VCE = 5V
105
Output Capacitance
NTE100
Cob
VCB = 6V
IE = 0, f = 1MHz
9
20
pF
NTE101
VCB = 5V
14
20
pF
Switching Characteristics
Delay Time
NTE100
td
IC = 10mA, IB(1) = 1.3mA,
0.14
µs
NTE101
IB(2) = 0.7mA, VBE(off) = 0.8V,
RL = 1kΩ
0.07
µs
Rise Time
tr
RL = 1kΩ
0.20
µs
Storage Time
NTE100
ts
0.38
µs
NTE101
0.70
µs
Fall Time
NTE100
tf
0.19
µs
NTE101
0.40
µs
Stored Base Charge
Qsb
IB(1) = 1mA, IC = 10mA
800
1400
pcb


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