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TPS56121DQPT Fiches technique(PDF) 6 Page - Texas Instruments |
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TPS56121DQPT Fiches technique(HTML) 6 Page - Texas Instruments |
6 / 31 page 6 TPS56121 SLUSAH4D – MARCH 2011 – REVISED FEBRUARY 2016 www.ti.com Product Folder Links: TPS56121 Submit Documentation Feedback Copyright © 2011–2016, Texas Instruments Incorporated Electrical Characteristics (continued) –40°C ≤ TJ ≤ 125°C, VVDD = 12 V, all parameters at zero power dissipation (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT IIB Input bias current (current out of FB pin) VFB = 0.6 V 75 nA IEAOP Output source current VFB = 0 V 1.5 mA IEAOM Output sink current VFB = 1 V 1.5 mA POWER GOOD VOV Feedback upper voltage limit for PGOOD 655 675 700 mV VUV Feedback lower voltage limit for PGOOD 500 525 550 VPGD-HYST PGOOD hysteresis voltage at FB 30 45 RPGD PGOOD pull down resistance VFB = 0 V, IFB = 5 mA 30 70 Ω IPGDLK PGOOD leakage current 550 mV < VFB < 655 mV, VPGOOD = 5 V 10 20 µA OUTPUT STAGE RHI High-side device resistance TJ = 25°C, (VBOOT – VSW) = 5.5 V 4.5 6.5 m Ω RLO Low side device resistance TJ = 25°C 1.9 2.7 OVERCURRENT PROTECTION (OCP) tPSSC(min) (1) Minimum pulse time during short circuit 250 ns tBLNKH (1) Switch leading-edge blanking pulse time (high-side detection) 150 IOCH OC threshold for high-side FET TJ = 25°C, (VBOOT – VSW) = 5.5 V 27 34 39 A IILIM ILIM current source TJ = 25°C 10.0 µA VOCLPRO (1) Programmable OC range for low side FET TJ = 25°C 12 100 mV tOFF OC retry cycles on EN/SS pin 4 Cycle BOOT DIODE VDFWD Bootstrap diode forward voltage IBOOT = 5 mA 0.8 V THERMAL SHUTDOWN TJSD (1) Junction shutdown temperature 145 ºC TJSDH (1) Hysteresis 20 ºC |
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