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TPS2041BDBVT Fiches technique(PDF) 9 Page - Texas Instruments |
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TPS2041BDBVT Fiches technique(HTML) 9 Page - Texas Instruments |
9 / 59 page 9 TPS2041B, TPS2042B, TPS2043B, TPS2044B TPS2051B, TPS2052B, TPS2053B, TPS2054B www.ti.com SLVS514M – JUNE 2010 – REVISED JUNE 2016 Product Folder Links: TPS2041B TPS2042B TPS2043B TPS2044B TPS2051B TPS2052B TPS2053B TPS2054B Submit Documentation Feedback Copyright © 2010–2016, Texas Instruments Incorporated Electrical Characteristics (continued) over recommended operating junction temperature range, VI(IN) = 5.5 V, IO = 0.5 A, VI(/ENx) = 0 V (unless otherwise noted) PARAMETER TEST CONDITIONS(1) MIN TYP MAX UNIT (2) The thermal shutdown only reacts under overcurrent conditions. SUPPLY CURRENT (TPS2042B, TPS2052B) Supply current, low-level output No load on OUT, VI(ENx) = 5.5 V TJ = 25°C 0.5 1 μA –40°C ≤ TJ ≤ 125°C 0.5 5 Supply current, high-level output No load on OUT, VI(ENx) = 0 V TJ = 25°C 50 70 μA –40°C ≤ TJ ≤ 125°C 50 90 Leakage current OUT connected to ground, VI(ENx) = 5.5 V –40°C ≤ TJ ≤ 125°C 1 μA Reverse leakage current VI(OUTx) = 5.5 V, IN = ground TJ = 25°C 0.2 μA SUPPLY CURRENT (TPS2043B, TPS2053B) Supply current, low-level output No load on OUT, VI(ENx) = 0 V TJ = 25°C 0.5 2 μA –40°C ≤ TJ ≤ 125°C 0.5 10 Supply current, high-level output No load on OUT, VI(ENx) = 5.5 V TJ = 25°C 65 90 μA –40°C ≤ TJ ≤ 125°C 65 110 Leakage current OUT connected to ground, VI(ENx) = 0 V –40°C ≤ TJ ≤ 125°C 1 μA Reverse leakage current VI(OUTx) = 5.5 V, INx = ground TJ = 25°C 0.2 μA SUPPLY CURRENT (TPS2044B, TPS2054B) Supply current, low-level output No load on OUT, VI(ENx) = 5.5 V, or VI(ENx) = 0 V TJ = 25°C 0.5 2 μA –40°C ≤ TJ ≤ 125°C 0.5 10 Supply current, high-level output No load on OUT, VI(ENx) = 0 V, or VI(ENx) = 5.5 V TJ = 25°C 75 110 μA –40°C ≤ TJ ≤ 125°C 75 140 Leakage current OUT connected to ground, VI(ENx) = 5.5 V, or VI(ENx) = 0 V –40°C ≤ TJ ≤ 125°C 1 μA Reverse leakage current VI(OUTx) = 5.5 V, INx = ground TJ = 25°C 0.2 μA UNDERVOLTAGE LOCKOUT Low-level input voltage, IN, INx 2 2.5 V Hysteresis, IN, INx TJ = 25°C 75 mV OVERCURRENT OC and OCx Output low voltage, VOL(/OCx) IO(OCx) = 5 mA 0.4 V Off-state current VO(OCx) = 5 V or 3.3 V 1 μA OC deglitch OCx assertion or deassertion 4 8 15 ms THERMAL SHUTDOWN(2) Thermal shutdown threshold 135 °C Recovery from thermal shutdown 125 °C Hysteresis 10 °C (1) Soldered PowerPAD on a standard 2-layer PCB without vias for thermal pad. See TI application note SLMA002 for further details. (2) Soldered PowerPAD on a standard 4-layer PCB with vias for thermal pad. See TI application note SLMA002 for further details. 7.6 Dissipation Ratings PACKAGE THERMAL RESISTANCE, θJA TA ≤ 25°C POWER RATING DERATING FACTOR ABOVE TA = 25°C TA = 70°C POWER RATING TA = 85°C POWER RATING DGN-8 1712.3 mW 17.123 mW/°C 941.78 mW 684.93 mW D-8 585.82 mW 5.8582 mW/°C 322.20 mW 234.32 mW D-16 898.47 mW 8.9847 mW/°C 494.15 mW 359.38 mW DBV-5 285 mW 2.85 mW/°C 155 mW 114 mW DRB-8 (Low-K)(1) 270 °CW 370 mW 3.71 mW/°C 203 mW 148 mW DRB-8 (High-K)(2) 60 °CW 1600 mW 16.67 mW/°C 916 mW 866 mW |
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