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TP5088WM Fiches technique(PDF) 2 Page - National Semiconductor (TI) |
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TP5088WM Fiches technique(HTML) 2 Page - National Semiconductor (TI) |
2 / 6 page Absolute Maximum Ratings If MilitaryAerospace specified devices are required please contact the National Semiconductor Sales OfficeDistributors for availability and specifications Supply Voltage (VDDbVSS) 12V MUTE Voltage 12V Maximum Voltage at Any Other Pin VDD a 03V to VSS b 03V Operating Temperature TA b 30 Cto a70 C Storage Temperature b 55 Cto a150 C Maximum Power Dissipation 500 mW Electrical Characteristics Unless otherwise noted limits printed in BOLD characters are guaranteed for VDD e 35V to 8V TA e 0 Cto a70 Cby correlation with 100% electrical testing at TA e 25 C All other limits are assured by correlation with other production tests and or product design and characterization Parameter Conditions Min Typ Max Units Minimum Supply Voltage VDD (min) Generating Tones 35 V Minimum Supply Voltage for Data Input 2V TONE ENABLE and MUTE Logic Functions Operating Current Idle RL e % D0–D3 Open 55 350 m A Generating Tones VDD e 35V Mute Open 15 25 mA Input Pull-Up Resistance D0–D3 100 kX TONE ENABLE 50 kX Input Low Level TONE ENABLE D0 – D3 02 VDD V Input High Level TONE ENABLE D0 – D3 08 VDD V MUTE OUT Sink Current VDD e 35V 04 mA (TONE ENABLE LOW) Vo e 05V MUTE OUT Leakage Current VDD e 35V 1 m A (TONE ENABLE HIGH) Vo e VDD Output Amplitudes RL e 240 X 130 170 220 mVrms Low Group VDD e 35V 180 230 310 mVrms High Group TA e 25 C Mean Output DC Offset VDD e 35V 12 V VDD e 8V 36 V High Group Pre-Emphasis 22 27 32 dB Dual ToneTotal Harmonic Distortion Ratio 1 MHz Bandwidth VDD e 5V b 20 dB RL e 240X Start-Up Time (to 90% Amplitude) tOSC 4ms Data Set-Up Time tS (Figure 2 )VDD e 5V 100 ns Data Hold Time tH VDD e 5V 280 ns Data Duration tW VDD e 5V 600 ns Note 1 RL is the external load resistor connected from TONE OUT to VSS 2 |
Numéro de pièce similaire - TP5088WM |
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Description similaire - TP5088WM |
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